Objective: The purpose of this study was to assess the feasibility of a study to measure the effect of resisted band antirotation exercises with the use of a double-pulse (DP) breathing exercise on slapshot and snap shot velocity and subjective assessment of performance.
Methods: Ten participants between 20 and 30 years of age who play ice hockey were recruited. The study was conducted over 3 weeks, and participants were randomized into 2 groups; group 1: resisted band antirotations with DP (a shout used in martial arts) exercises, and group 2: resisted band antirotations alone. After week 1, there was a 1-week washout period, after which group 1 performed resisted band antirotations alone, and group 2 performed resisted band antirotations with DP exercises.
Results: Data were successfully collected on all 10 participants. There appeared to be no difference between groups regarding slapshot and snap shot velocity.
Conclusion: The design for this study appears to be feasible. Preliminary data show that the average shot velocity before and after the intervention did not show a positive relationship between DP breathing and hockey shot (slapshot and snap shot) velocity.
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http://dx.doi.org/10.1016/j.jcm.2018.07.001 | DOI Listing |
Sci Adv
January 2025
Key Laboratory of Automobile Materials (Jilin University), Ministry of Education, Department of Materials Science and Engineering, Jilin University, Changchun 130022, China.
Vacancies are crucial for the radiation resistance, strength, and ductility of high-entropy alloys (HEAs). However, complex electronic interactions resulting from chemical disorder prohibit the quantification of vacancy formation energy () and migration barriers (). Herein, we propose an electronic descriptor χ (electronegativity χ and valence-electron number ) to quantify the bonding strength of constituents on the basis of the tight-binding model, which allows us to build analytical models to achieve the site-to-site quantification of and .
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
We consider a half-filled Chern band and its transport properties in two phases that it may form: the electronic Fermi liquid and the composite-fermion Fermi liquid. For weak disorder, we show that the Hall resistivity for the former phase is very small, while for the latter it is close to 2h/e^{2}, independent of the distribution of the Berry curvature in the band. At rising temperature and high frequency, we expect the Hall resistivity of the electronic phase to rise, and that of the composite-fermion phase to deviate from 2h/e^{2}.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong 518107, P.R. China.
Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring TCOs. However, no promising industrial solution has been obtained yet.
View Article and Find Full Text PDFDalton Trans
January 2025
Departamento de Química Inorgánica, Facultad de Química y Farmacia, Centro de Energía UC, Centro de Investigación en Nanotecnología y Materiales Avanzados CIEN-UC, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna, 4860, Santiago, Chile.
Recalcitrant pollutants are challenging to degrade during water treatment processes. Methylene blue (MB), a cationic dye, is particularly resistant to degradation and is environmentally persistent. Heterogeneous photocatalysis has emerged as a suitable strategy for removing such pollutants from water.
View Article and Find Full Text PDFSci Rep
January 2025
Department of Sciences, Indian Institute of Information Technology Design and Manufacturing Kurnool, Kurnool, Andhra Pradesh, 518008, India.
The simulation of ideal and non-ideal conditions using the SCAPS-1D simulator for novel structure Ag/FTO/CuBiO/GQD/Au was done for the first time. The recombination of charge carriers in CuBiO is an inherent problem due to very low hole mobility and polaron transport in the valence band. The in-depth analysis of the simulation result revealed that Graphene Quantum Dots (GQDs) can act as an appropriate hole transport layer (HTL) and can enhance hole transportation.
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