Interface effects in hybrid hBN-graphene nanoribbons.

Sci Rep

Instituto de Física, Universidade Federal Fluminense, Av. Litorânea sn, 24210-340, Niterói-Rio de Janeiro, RJ, Brazil.

Published: March 2019

We analyze the electronic properties of a hybrid graphene-BN nanoribbon system, using a Hubbard model Hamiltonian within a mean field approximation. Due to the different electronegativities of the boron and nitrogen atoms, an electric field is induced across the zigzag graphene strip, breaking the spin degeneracy of the electronic band structure. Optimal tight-binding parameters are found from first-principles calculations. Edge potentials are proposed as corrections for the on-site energies, modeling the BN-graphene nanoribbon interfaces. We show that half-metallic responses in the hybrid systems may be driven with the help of an external electric field. We also study the role of defects across the graphene nanoribbon and at the h-BN/graphene interface regions. Modulations on the spin-dependent gaps may be achieved depending on the nature and position of the defect, constituting a way towards spin-gap engineering by means of spatial doping.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401180PMC
http://dx.doi.org/10.1038/s41598-019-39763-5DOI Listing

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