Daylight-Induced Metal-Insulator Transition in Ag-Decorated Vanadium Dioxide Nanorod Arrays.

ACS Appl Mater Interfaces

Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University, Seoul 08826 , Republic of Korea.

Published: March 2019

Metal-insulator transition (MIT) in strongly correlated electronic materials has enormous potential with scientific and technological impacts in future oxide nanoelectronic devices. Although photo-induced MIT can provide opportunities to extend the novel functionality of strongly correlated electronic materials, there have rarely been reports on it. Here, we report MIT provoked by visible-near-infrared light in Ag-decorated VO nanorod arrays (NRs) because of localized surface plasmon resonance (LSPR) and its application to broadband photodetectors. Our simulation results based on the finite-difference time-domain method show that the electric field resulting from LSPR can be generated at the interface between Ag nanoparticles and VO layers under vis NIR illumination. Using high-resolution transmission electronic microscopy and Raman spectroscopy, we observe the MIT and structural phase transition in the Ag-decorated VO NRs due to the LSPR effect. The optoelectronic measurements confirm that high, fast, and broad photoresponse of Ag-decorated VO NRs is attributed to photo-induced MIT due to LSPR. Our study will open up a new strategy to trigger MIT in strongly correlated electronic materials through functionalization with plasmonic nanoparticles and serve as a valuable proof of concept for next-generation optoelectronic devices with fast response, low power consumption, and high performance.

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http://dx.doi.org/10.1021/acsami.8b19490DOI Listing

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