This paper presents the design, simulation, fabrication and experiments of a micromachined z-axis tunneling magnetoresistive accelerometer with electrostatic force feedback. The tunneling magnetoresistive accelerometer consists of two upper differential tunneling magnetoresistive sensors, a middle plane main structure with permanent magnetic films and lower electrostatic feedback electrodes. A pair of lever-driven differential proof masses in the middle plane main structure is used for sensitiveness to acceleration and closed-loop feedback control. The tunneling magnetoresistive effect with high sensitivity is adopted to measure magnetic field variation caused by input acceleration. The structural mode and mass ratio between inner and outer proof masses are optimized by the Ansys simulation. Simultaneously, the magnetic field characteristic simulation is implemented to analyze the effect of the location of tunneling magnetoresistive sensors, magnetic field intensity, and the dimension of permanent magnetic film on magnetic field sensitivity, which is beneficial for the achievement of maximum sensitivity. The micromachined z-axis tunneling magnetoresistive accelerometer fabricated by the standard deep dry silicon on glass (DDSOG) process has a device dimension of 6400 μm (length) × 6400 μm (width) × 120 μm (height). The experimental results demonstrate the prototype has a maximal sensitivity of 8.85 mV/g along the z-axis sensitive direction under the gap of 1 mm. Simultaneously, Allan variance analysis illustrate that a noise floor of 86.2 μg/Hz is implemented in the z-axis tunneling magnetoresistive accelerometer.
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http://dx.doi.org/10.3390/mi10020158 | DOI Listing |
ACS Appl Mater Interfaces
December 2024
Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai 980-8578, Japan.
Spin-dependent charge tunneling transport of magnetic nanocomposites under alternating current or direct current has revolutionized the understanding of the quantum-mechanical phenomenon in complex granular solids. The tunnel magnetodielectric (TMD) and tunnel magnetoresistance (TMR) effects are two critical functionalities in this context, where dielectric permittivity and electrical resistance, respectively, change in response to an applied magnetic field due to charge tunneling. However, the structural correlation between TMD and TMR, as well as the mechanisms, remains poorly understood, largely due to the challenges in directly characterizing nanoscale intergranular interactions.
View Article and Find Full Text PDFSmall Methods
December 2024
State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
Memristors and magnetic tunnel junctions are showing great potential in data storage and computing applications. A magnetoelectrically coupled memristor utilizing electron spin and electric field-induced ion migration can facilitate their operation, uncover new phenomena, and expand applications. In this study, devices consisting of Pt/(LaCoO/SrTiO)/LaCoO/Nb:SrTiO (Pt/(LCO/STO)/LCO/NSTO) are engineered using pulsed laser deposition to form the LCO/STO superlattice layer, with Pt and NSTO serving as the top and bottom electrodes, respectively.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway.
New unconventional compensated magnets with a p-wave spin polarization protected by a composite time-reversal translation symmetry have been proposed in the wake of altermagnets. To facilitate the experimental discovery and applications of these unconventional magnets, we construct an effective analytical model. The effective model is based on a minimal tight-binding model for unconventional p-wave magnets that clarifies the relation to other magnets with p-wave spin-polarized bands.
View Article and Find Full Text PDFNanoscale Horiz
December 2024
Electrical and Computer Engineering, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, USA.
Antiferromagnetic materials have several unique properties, such as a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against perturbation from external magnetic fields and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electrical manner must be developed to enable advanced spintronic devices with antiferromagnets as their active spin-dependent elements. Among the various antiferromagnetic materials, conducting antiferromagnets offer high electrical and thermal conductivities and strong electron-spin-phonon interactions.
View Article and Find Full Text PDFPhys Chem Chem Phys
December 2024
College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China.
Recently, atomic-thickness van der Waals (vdW) layered bismuth selenite (BiSeO) has been successfully synthesized, not only expanding the family of two-dimensional (2D) materials, but also playing a pivotal role in the advancement of 2D electronics as a high- dielectric. In this work, we systematically study the basic properties of 2D BiSeO through first-principles calculations, focusing on the spin-orbit coupling (SOC) effect and layer-dependent behaviors. The results show that SOC can adjust the bandgap of bulk/2D BiSeO from direct to indirect, with the bandgap decreasing upon increasing the thickness due to quantum confinement.
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