A correction and additions concerning the limiting point groups are made to the article by Grimmer [Acta Cryst. (2017), A73, 333-345].
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1107/S2053273318016947 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Lattice plainification and band engineering lead to high thermoelectric cooling and power generation in n-type BiTe with mass production.
Natl Sci Rev
February 2025
School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
Thermoelectrics can mutually convert between thermal and electrical energy, ensuring its utilization in both power generation and solid-state cooling. BiTe exhibits promising room-temperature performance, making it the sole commercially available thermoelectrics to date. Guided by the lattice plainification strategy, we introduce trace amounts of Cu into n-type Bi(Te, Se) (BTS) to occupy Bi vacancies, thereby simultaneously weakening defect scattering and modulating the electronic bands.
View Article and Find Full Text PDFPhonon thermal transport in BiTe/SbTe monolayer superlattices: a neural network potential study.
Nanoscale
January 2025
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
Superlattices are significant means to reduce the lattice thermal conductivity of thermoelectric materials and optimize their performance. In this work, using high-precision first-principles based neural network potentials combined with non-equilibrium molecular dynamics simulations and the phonon Boltzmann transport equation, the lattice thermal conductivities of BiTe monolayer and lateral BiTe/SbTe monolayer superlattices are thoroughly investigated. As the period length increases, the thermal conductivity shows a trend of an initial decrease followed by an increase, which aligns with conventional observations.
View Article and Find Full Text PDFBoosting Thermoelectric Performance of Semicrystalline Conducting Polymers by Simply Adding Nucleating Agent.
Adv Mater
January 2025
State Key Laboratory of Structural Chemistry, CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), Fuzhou, Fujian, 350002, China.
Controlling the microstructure of semiconducting polymers is critical for optimizing thermoelectric performance, yet remains challenging, requiring complex processing techniques like alignment. In this study, a straightforward strategy is introduced to enhance the thermoelectric properties of semi-crystalline polymer films by incorporating minimal amounts of nucleating agents, a method widely used in traditional polymer industries. By blending less than 1 wt% of N,N'-(1,4-phenyl)diisonicotinamide (PDA) into poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14), controlled modulation of crystallization behavior is achieved, resulting in reduced structural disorder and enhanced charge carrier mobility.
View Article and Find Full Text PDFNanosecond Nanothermometry in an Electron Microscope.
Nano Lett
January 2025
University Paris-Saclay, CNRS, Laboratoire de Physique des Solides, Orsay 91405, France.
Thermal transport in nanostructures plays a critical role in modern technologies. As devices shrink, techniques that can measure thermal properties at nanometer and nanosecond scales are increasingly needed to capture transient, out-of-equilibrium phenomena. We present a novel pump-probe photon-electron method within a scanning transmission electron microscope (STEM) to map temperature dynamics with unprecedented spatial and temporal resolutions.
View Article and Find Full Text PDFFavorable Contact with Low Interfacial Resistance for n-Type TiCoSb-Based Thermoelectric Devices.
ACS Appl Mater Interfaces
January 2025
CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India.
In the past decade, significant efforts have been made to develop efficient half-Heusler (HH) based thermoelectric (TE) materials. However, their practical applications remain limited due to various challenges occurring during the fabrication of TE devices, particularly the development of stable contacts with low interfacial resistance. In this study, we have made an effort to explore a stable contact material with low interfacial resistance for an n-type TiCoSb-based TE material, specifically TiNbCoSbBi as a proof of concept, using a straightforward facile synthesis route of spark plasma sintering.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!