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Early examples of computers were almost exclusively based on mechanical devices. Although electronic computers became dominant in the past 60 years, recent advancements in three-dimensional micro-additive manufacturing technology provide new fabrication techniques for complex microstructures which have rekindled research interest in mechanical computations. Here we propose a new digital mechanical computation approach based on additively-manufacturable micro-mechanical logic gates. The proposed mechanical logic gates (i.e., NOT, AND, OR, NAND, and NOR gates) utilize multi-stable micro-flexures that buckle to perform Boolean computations based purely on mechanical forces and displacements with no electronic components. A key benefit of the proposed approach is that such systems can be additively fabricated as embedded parts of microarchitected metamaterials that are capable of interacting mechanically with their surrounding environment while processing and storing digital data internally without requiring electric power.
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http://dx.doi.org/10.1038/s41467-019-08678-0 | DOI Listing |
Talanta
December 2024
College of Public Health, School of Basic Medicine, Ningxia Medical University, Yinchuan, 750004, China. Electronic address:
The quantitative detection of HO is of great significance for preventing the occurrence of diseases. In this work, an electrochemical biosensor for detecting HO was constructed through a step-by-step modification method. The PDEA-HRP/MXene/PG biosensor (PDEA = poly(N,N-dimethyl acrylamide), HRP = horseradish peroxidase, PG = pyrolytic graphite) was prepared with two-dimensional metal carbide (MXene) nano materials as the inner layer and PDEA-HRP hydrogel as the outer layer for the detection of HO.
View Article and Find Full Text PDFNucleic Acids Res
December 2024
School of Computer Science and Cyber Engineering, GuangZhou University, 230 Wai Huan Xi Road, Guangzhou Higher Education Mega Center, Guangzhou, 510006, China.
DNA nanotechnology has created a wide variety of nanostructures that provide a reliable platform for nanofabrication and DNA computing. However, constructing programmable finite arrays that allow for easy pre-functionalization remains challenge. We aim to create more standardized and controllable DNA origami components, which could be assembled into finite-scale and more diverse superstructures driven by instruction sets.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
Components needed in Artificial Intelligence with a higher information capacity are critically needed and have garnered significant attention at the forefront of information technology. This study utilizes solution-processed zinc-tin oxide (ZTO) thin-film phototransistors and modulates the values of , which allows for the regulation of electron trapping/detrapping at the ZTO/SiO interface. By coupling the excited photonic carrier and electronic trapping, logic gates such as "AND," "OR," "NAND," and "NOR" can be achieved.
View Article and Find Full Text PDFACS Nano
December 2024
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Negative differential transconductance (NDT) devices have emerged as promising candidates for multivalued logic computing, and particularly for ternary logic systems. To enable computation of any ternary operation, it is essential to have a functionally complete set of ternary logic gates, which remains unrealized with current NDT technologies, posing a critical limitation for higher-level circuit design. Additionally, NDT devices typically rely on heterojunctions, complicating fabrication and impacting reliability due to the introduction of additional materials and interfaces.
View Article and Find Full Text PDFSmall Methods
December 2024
Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, 560012, India.
The intrinsic n-type behavior and unavailability of the appropriate p-type doping method for MoS allows only n-type conduction with depletion mode (D-mode) characteristics and forbids the implementation of p-type field-effect transistors (FETs). The D-mode characteristic results in a high off-current (I) at zero gate bias, which limits the usage of MoS FETs for industry-scale (n-channel metal-oxide semiconductor) NMOS/(complementary metal-oxide semiconductor) CMOS-logic-based applications due to significant power dissipation. Both these issues, i.
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