Ferromagnet/two-dimensional transition-metal dichalcogenide (FM/2D TMD) interfaces provide attractive opportunities to push magnetic information storage to the atomically thin limit. Existing work has focused on FMs contacted with mechanically exfoliated or chemically vapor-deposition-grown TMDs, where clean interfaces cannot be guaranteed. Here, we report a reliable way to achieve contamination-free interfaces between ferromagnetic CoFeB and molecular-beam epitaxial MoSe. We show a spin reorientation arising from the interface, leading to a perpendicular magnetic anisotropy (PMA), and reveal the CoFeB/2D MoSe interface allowing for the PMA development in a broader CoFeB thickness-range than common systems such as CoFeB/MgO. Using X-ray magnetic circular dichroism analysis, we attribute generation of this PMA to interfacial d-d hybridization and deduce a general rule to enhance its magnitude. We also demonstrate favorable magnetic softness and considerable magnetic moment preserved at the interface and theoretically predict the interfacial band matching for spin filtering. Our work highlights the CoFeB/2D MoSe interface as a promising platform for examination of TMD-based spintronic applications and might stimulate further development with other combinations of FM/2D TMD interfaces.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acsnano.8b08926DOI Listing

Publication Analysis

Top Keywords

transition-metal dichalcogenide
8
perpendicular magnetic
8
magnetic anisotropy
8
fm/2d tmd
8
tmd interfaces
8
cofeb/2d mose
8
mose interface
8
magnetic
6
interface
5
ferromagnet/two-dimensional semiconducting
4

Similar Publications

Free Carrier Auger-Meitner Recombination in Monolayer Transition Metal Dichalcogenides.

Nano Lett

December 2024

Wyant College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, Arizona 85721, United States.

Microscopic many-body models based on inputs from first-principles density functional theory are used to calculate the carrier losses due to free carrier Auger-Meitner recombination (AMR) processes in Mo- and W-based monolayer transition metal dichalcogenides as a function of the carrier density, temperature, and dielectric environment. Despite the exceptional strength of Coulomb interaction in the two-dimensional materials, the AMR losses are found to be similar in magnitude to those in conventional III-V-based quantum wells for the same wavelengths. Unlike the case in III-V materials, the losses show nontrivial density dependencies due to the fact that bandgap renormalizations on the order of hundreds of millielectronvolts can bring higher bands into or out of resonance with the optimal energy level for the AMR transition, approximately one bandgap from the lowest band.

View Article and Find Full Text PDF

The interfacial adhesion between transition metal dichalcogenides (TMDs) and the growth substrate significantly influences the employment of flakes in various applications. Most previous studies have focused on MoS and graphene, particularly their interaction with SiO/Si substrates. In this work, the adhesion strength of CVD-grown bilayer WS is directly measured using the nano scratch technique on three different substrates-Sapphire, SiO/Si, and fused quartz.

View Article and Find Full Text PDF

Two-dimensional (2D) high-entropy transition metal dichalcogenides (HETMDs) have gained significant interest due to their structural properties and correlated possibilities for high-end devices. However, the controlled synthesis of 2D HETMDs presents substantial challenges owing to the distinction in the inherent characteristics among diverse metal elements in the synthesis, such as saturated vapor pressure of precursors and formation energy of products. Here, we present the synthesis of a 2D HETMD single crystal with 0.

View Article and Find Full Text PDF

Monolayer transition metal dichalcogenides (TMDs) with strong exciton effects have enabled diverse light emitting devices, however, their Ångstrom thickness makes it challenging to efficiently manipulate exciton emission by themselves. Although their nanostructured multi-layer counterparts can effectively manipulate optical field at deep subwavelength thickness scale, these indirect band gap multi-layer TMDs are lack of strong luminescence, hindering their applications in light emitting devices. Here, the integration of monolayer TMDs is presented with nanostructured multi-layer TMDs, combining both strong exciton emission and optical manipulation in a single ultra-thin platform.

View Article and Find Full Text PDF

In doped semiconductors such as monolayer transition-metal dichalcogenides (TMDs), the optical properties are predominantly determined by exciton polarons, which are coherent superpositions of excitons and electron-hole excitation pairs in the Fermi sea. Here, we theoretically study the effect of exciton polarons on thermal radiation in doped two-dimensional semiconductors. By deriving an emissivity formula in terms of the dielectric function and the thickness of two-dimensional semiconductors, we show that the emissivity spectrum exhibits a narrow peak at the energy of an exciton polaron.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!