In this work, we investigate the adsorption process of CO in graphene quantum dots from the electronic structure and spectroscopic properties point of view. We discuss how a specific doping scheme could be employed to further enhance the adsorbing properties of the quantum dots. This is evaluated by considering the depth of the potential well, the spectroscopic constants, and the lifetime of the compound. Electronic structure calculations are carried out in the scope of the density functional theory (DFT), whereas discrete variable representation (DVR) and Dunham methodologies are employed to obtain spectroscopic constants and hence the lifetimes of the systems. Our results suggest that nitrogen-doped graphene quantum dots are promising structures as far as sensing applications of CO are concerned. Graphical Abstract Adsorption mechanism of the CO molecule in (a) a pristine and (b) a nitrogendoped Graphene Quantum Dot.
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http://dx.doi.org/10.1007/s00894-019-3951-5 | DOI Listing |
Nanoscale
January 2025
Physics Department E20, School of Natural Sciences, Technical University of Munich, Garching, 85748, Germany.
-Armchair graphene nanoribbons (nAGNRs) are promising components for next-generation nanoelectronics due to their controllable band gap, which depends on their width and edge structure. Using non-metal surfaces for fabricating nAGNRs gives access to reliable information on their electronic properties. We investigated the influence of light and iron adatoms on the debromination of 4,4''-dibromo--terphenyl precursors affording poly(-phenylene) (PPP as the narrowest GNR) wires through the Ullmann coupling reaction on a rutile TiO(110) surface, which we studied by scanning tunneling microscopy and X-ray photoemission spectroscopy.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Interfacial ferroelectricity emerges in non-centrosymmetric heterostructures consisting of non-polar van der Waals (vdW) layers. Ferroelectricity with concomitant Coulomb screening can switch topological currents or superconductivity and simulate synaptic response. So far, it has only been realized in bilayer graphene moiré superlattices, posing stringent requirements to constituent materials and twist angles.
View Article and Find Full Text PDFACS Appl Bio Mater
January 2025
Department of Internal Medicine, College of Medicine, Seoul National University, Seoul 03080, Korea.
Graphene quantum dots (GQDs) have received much attention for their biomedical applications, such as bioimaging and drug delivery. Additionally, they have antioxidant and anti-inflammatory properties. We used GQDs to treat renal fibrosis and confirmed their ability to protect renal cells from excessive oxidative stress in vitro and in vivo.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Applied Physics and Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Korea.
One-dimensional (1D) vertical nitrides are highly attractive for light-emitting diode (LED) applications because they are useful for overcoming the drawbacks of conventional GaN planar structures. However, the internal quantum efficiency (IQE) of GaN multi-quantum-well (MQW) nanowire (NW) LEDs, typical 1D GaN structures, is still too low to replace standard planar LEDs. Here, we report a phenomenon of light amplification from core-shell InGaN/GaN NW LEDs by incorporating graphene quantum dots (GQDs).
View Article and Find Full Text PDFACS Nano
January 2025
Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Advanced Research Institute of Multidisciplinary Science, and School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe at the boundary of ML and bilayer graphene on SiC.
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