Atomic layer deposition of a SnO electron-transporting layer for planar perovskite solar cells with a power conversion efficiency of 18.3.

High-efficiency planar type perovskite solar cells were fabricated by atomic layer deposition (ALD) of SnO2 and subsequent annealing at 180 °C. As-dep. SnO2 layers prepared by post-annealing at 180 and 300 °C, respectively, were used as electron transporting layers (ETLs). ALD-TiO2 layers were also prepared by post annealing at 400 °C, and the thicknesses of all ETLs were around 12 nm. PL quenching, optical band gap measurement, UPS, and conductive AFM results show that SnO2 can more appropriately be used as an ETL compared to TiO2.