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Impact of tensile strain on low Sn content GeSn lasing. | LitMetric

AI Article Synopsis

  • * The study demonstrates that applying tensile strain in low Sn content GeSn layers significantly improves photoluminescence, with a calculated strain of ~1.45% being effective enough to convert the material into a direct bandgap semiconductor.
  • * Theoretical calculations suggest that these low Sn content, tensile strained GeSn layers offer advantages in terms of gain and lasing temperature, showing promise for efficient room temperature lasers in electronic-photonic integrated circuits.

Article Abstract

In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal budget regarding processing. In this work we demonstrate strong photoluminescence enhancement in low Sn content GeSn layers by implementing tensile strain. Fitting of the calculated photoluminescence spectra to reproduce our experimental results indicates a strain of ~1.45%, induced via an SiN stressor layer, which is strong enough to transform the investigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the 8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respect to gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential to enable efficient room temperature lasers on electronic-photonic integrated circuits.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6342923PMC
http://dx.doi.org/10.1038/s41598-018-36837-8DOI Listing

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