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Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate.
Nat Mater
November 2024
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Hexagonal boron nitride (hBN) has emerged as a promising protection layer for dielectric integration in the next-generation large-scale integrated electronics. Although numerous efforts have been devoted to growing single-crystal hBN film, wafer-scale ultraflat hBN has still not been achieved. Here, we report the epitaxial growth of 4 in.
View Article and Find Full Text PDFWafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration.
Nat Commun
April 2023
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
The practical application of two-dimensional (2D) semiconductors for high-performance electronics requires the integration with large-scale and high-quality dielectrics-which however have been challenging to deposit to date, owing to their dangling-bonds-free surface. Here, we report a dry dielectric integration strategy that enables the transfer of wafer-scale and high-κ dielectrics on top of 2D semiconductors. By utilizing an ultra-thin buffer layer, sub-3 nm thin AlO or HfO dielectrics could be pre-deposited and then mechanically dry-transferred on top of MoS monolayers.
View Article and Find Full Text PDFPassivation Strategies for Enhancing Solution-Gated Carbon Nanotube Field-Effect Transistor Biosensing Performance and Stability in Ionic Solutions.
ACS Appl Nano Mater
October 2022
Department of Electrical & Computer Engineering, Duke University, Durham, North Carolina 27708, United States.
Interest in point-of-care diagnostics has led to increasing demand for the development of nanomaterial-based electronic biosensors such as biosensor field-effect transistors (BioFETs) due to their inherent simplicity, sensitivity, and scalability. The utility of BioFETs, which use electrical transduction to detect biological signals, is directly dependent upon their electrical stability in detection-relevant environments. BioFET device structures vary substantially, especially in electrode passivation modalities.
View Article and Find Full Text PDFUniformity of HfO Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition.
Nanomaterials (Basel)
December 2022
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.
In this study, we assessed the physical and chemical properties of HfO thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO thin film's growth by tracing the changes in the growth rate and refractive index with respect to the different dose times of the Hf precursor and O plasma. The PEALD conditions were optimized with consideration of the lowest surface roughness of the films, which was measured by atomic force microscopy (AFM).
View Article and Find Full Text PDFWafer-scale graphene-ferroelectric HfO/Ge-HfO/HfO transistors acting as three-terminal memristors.
Nanotechnology
December 2020
National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126 A, Voluntari 077190, Romania.
In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO/Ge-HfO/HfO three-layer structure. This kind of transistor has a switching ratio of 10 between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene.
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