Controlled Enhancement in Hole Injection at Gold-Nanoparticle-on-Organic Electrical Contacts Fabricated by Spark-Discharge Aerosol Technique.

ACS Appl Mater Interfaces

Graduate School of Convergence Science and Technology, and Inter-University Semiconductor Research Center , Seoul National University, 1 Gwanak-ro , Gwanak-gu, Seoul 08826 , Republic of Korea.

Published: February 2019

We demonstrate that hole injection from a top electrode composed of Au nanoparticles (AuNPs) capped with a thick Au layer into an underlying organic semiconductor, N, N'-diphenyl- N, N'-bis-[4-(phenyl- m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine (DNTPD), is significantly enhanced compared to that in a control device whose top electrode is composed entirely of a thick Au layer. The fabrication of this organic hole-only device with the AuNP electrode is made possible by dry, room-temperature distribution of AuNPs onto DNTPD using a spark-discharge aerosol technique capable of varying the average diameter ( D̅) of the AuNPs. The enhancement in hole injection is found to increase with decreasing D̅, with the current density of a device with D̅ = 1.1 nm being more than 3 orders of magnitude larger than that of the control device. Intensity-modulated photocurrent measurements show that the built-in potentials of the devices with the AuNP electrode are smaller than that of the control device by as much as 0.68 V, indicating that the enhanced hole injection originates from the increased work functions of these devices, which in turn decreases the hole injection barrier heights. X-ray photoelectron spectroscopy reveals that the increased work functions of the AuNP electrodes are due to surface oxidation of the AuNPs resulting in AuN and AuN. The degree of oxidation of the AuNPs increases with decreasing D̅, consistent with the D̅-dependencies of the hole injection enhancement and the built-in potential reduction.

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http://dx.doi.org/10.1021/acsami.8b16303DOI Listing

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