AI Article Synopsis

  • This study focuses on the importance of clear interfaces between donor and acceptor molecules in organic optoelectronic devices, specifically investigating the growth of carbon (C) on rubrene (CH) surfaces.
  • Using grazing incidence x-ray diffraction (GIXD), researchers found that while C formed organized layers on rubrene, it also resulted in two different crystalline structures unlike the unique alignment seen with pentacene.
  • Increasing the growth temperature significantly improved the crystallinity and average size of the crystalline domains, which could enhance the efficiency of organic photovoltaics by boosting charge carrier mobility at donor-acceptor interfaces.

Article Abstract

Uniform and well-defined interfaces are required for clarification of fundamental processes at internal interfaces between donor and acceptor molecules constituting organic optoelectronic devices. In this study, evolution of a well-ordered molecular interface, epitaxially grown C on the single crystal rubrene (CH) surface, was accurately investigated by grazing incidence x-ray diffraction (GIXD) techniques. Contrasting to the case of C on the single crystal pentacene forming uniquely aligned epitaxial interfaces, coexistence of two inequivalent crystalline domains of C was identified on the single crystal rubrene. Nevertheless, crystallinity of C/rubrene exhibited even more remarkable improvement to extend its in-plane average crystallite size up to 250 nm as the growth temperature was raised. Probable leading factors determining the structures and crystallinity of the well-defined molecular interfaces are discussed based on close comparison of the present results with the C/pentacene interfaces. The techniques presented herein for enhancement of the crystallinity in epitaxial molecular interfaces are potentially applicable to development in the photoelectric power conversion efficiency of organic photovoltaics (OPVs) via improved charge carrier mobility in donor-acceptor interfaces.

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Source
http://dx.doi.org/10.1088/1361-648X/aafde0DOI Listing

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