Temperature-Dependent Electrical Transport Properties of Individual NiCoO Nanowire.

Nanoscale Res Lett

Key Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, People's Republic of China.

Published: January 2019

AI Article Synopsis

  • Understanding the electrical transport properties of individual NiCoO nanowires is crucial for enhancing nanodevice performance, specifically in applications like electrocatalysis and energy storage.
  • The study successfully created NiCoO nanowires through thermal transformation and examined their conduction mechanisms, revealing three different conduction types based on electric field strength: ohmic at low fields, Schottky emission at intermediate fields, and Poole-Frenkel conduction at high fields.
  • Temperature influences conductivity significantly, with low temperatures exhibiting Mott's variable range hopping (VRH) behavior and higher temperatures showing a mix of VRH and nearest neighbor hopping (NNH) mechanisms, which can guide future energy-storage device designs.

Article Abstract

Understanding the electrical transport properties of individual nanostructures is of great importance to the construction of high-performance nanodevices. NiCoO nanowires have been investigated widely as the electrodes in electrocatalysis, supercapacitors, and lithium batteries. However, the exact electrical transport mechanism of an individual NiCoO nanowire is still ambiguous, which is an obstacle for improving the performance improvement of energy storage devices. In this work, NiCoO nanowires were prepared successfully by thermal transformation from the CoNi-hydroxide precursors. The electrical transport properties of an individual NiCoO nanowire and its temperature-dependent conduction mechanisms were studied in detail. The current-voltage characteristics showed that an ohmic conduction in a low electrical field (< 1024 V/cm), Schottky emission in a middle electric field (1024 V/cm < E < 3025 V/cm), and Poole-Frenkel conduction at a high electric field (> 3025 V/cm). A semiconductive characteristic is found in the temperature-dependent conductivity in the NiCoO nanowire; the electrical conduction mechanism at low temperature (T < 100 K) can be explained by Mott's variable range hopping (VRH) model. When the temperature is greater than 100 K, electrical transport properties were determined by the VRH and nearest neighbor hopping (NNH) Model. These understandings will be helpful to the design and performance improvement of energy-storage devices based on the NiCoO nanowires.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6325049PMC
http://dx.doi.org/10.1186/s11671-018-2844-3DOI Listing

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