A new strategy for evaluating the efficiency of Dye-sensitized Solar Cell (DSC) employed in this study was to introduce a device stabilizer which also functioned as an external load. This aim was accomplished through computations of efficiency of different DSCs based on n-Mosfet transistor. Transistor Z44 mosfet's impact on the DSC systems was to significantly moderate the effect of two vital components namel; the photoanodes and electrolyte sensitizers. The outcome of the Z44 mosfet incorporation inside the DSC was a synchronization in photovoltaic spectral responses thereby, minimizing the common limitations of DSCs such as dye synergy, redox kinematics, photophysics and roughness factor which is not restrictive to N719 dyes. This study presents the results of indium-doped tin oxide (ITO) conducting glass doped DSCs with different electrolytes enhanced with a transistor mosfet; short-circuit current density (I) of 0.104 A cm, open-circuit voltage (V) of 240.6 mV, efficiency of 0.9 % and a fill factor of 0.12 obtained under 1 atmospheric air mass conditions. The implication of this result is possible reproducibility and modelling of Mosfet DSC based on the comparative analysis of the output performance of DSC on TiO and ZnO photoanode. This also gives impetus for further scientific inquiry.
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http://dx.doi.org/10.1016/j.heliyon.2018.e01078 | DOI Listing |
J Phys Condens Matter
October 2023
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an 710032, People's Republic of China.
Two-dimensional (2D) semiconductors with bizarre properties show great application potential for nanoscale devices, which is regarded as the Si alternation to extend the Moore's Law in sub-5 nm era. In this study, we investigate the electronic structure and ballistic transport characteristics of sub-5 nm bilayer (BL) GaOmetal-oxide-semiconductor field-effect transistor (MOSFET) using the first-principles calculations and the nonequilibrium Green's function method. Quasi-direct band structure with bandgap of 4.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2022
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an710032, China.
The electronic properties of monolayer (ML) GaO and transport properties of ML GaO-based n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated by first-principles calculations under the framework of density functional theory (DFT) coupled with the nonequilibrium Green's function (NEGF) formalism. The results show that ML GaO has a quasi-direct band gap of 4.92 eV, and the - and -directed electron mobilities are 1210 and 816 cm V s at 300 K, respectively, under the full consideration of phonon scattering.
View Article and Find Full Text PDFMicromachines (Basel)
September 2022
ICT & Robotics Engineering, Semiconductor Convergence Engineering, AISPC Laboratory, and IITC, Hankyong National University, 327 Jungang-ro, Anseong-si 17579, Gyeonggi-do, Korea.
The effect of the work-function variation (WFV) of metal-oxide-semiconductor field-effect transistor (MOSFET) gates on a monolithic 3D inverter (M3DINV) structure is investigated in the current paper. The M3DINV has a structure in which MOSFETs are sequentially stacked. The WFV effect of the top- and bottom-tier gates on the M3DINV is investigated using technology computer-aided design (TCAD) and a Monte-Carlo sampling simulation of TCAD.
View Article and Find Full Text PDFNanoscale Res Lett
April 2022
The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P + anode electrode of RC-LIGBT and the other side is connected to the N + anode via a floating ohmic contact.
View Article and Find Full Text PDFNanoscale
November 2019
Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
2D materials are considered as excellent candidates for next-generation electronic and optoelectronic devices. However, the corresponding systems with both an appropriate direct band gap and high carrier mobility are urgently required. Here, a new 2D semiconductor, monolayer RhTeCl, is investigated based on first-principles calculations.
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