High-frequency gating InGaAs/InP single-photon detectors (SPDs) are widely used for applications requiring single-photon detection in the near-infrared region such as quantum key distribution. Reducing SPD size is highly desired for practical use, which is favorable to the implementation of further system integration. Here we present, to the best of our knowledge, the most compact high-frequency sine wave gating (SWG) InGaAs/InP SPD. We design and fabricate an InGaAs/InP single-photon avalanche diode (SPAD) with optimized semiconductor structure and then encapsulate the SPAD chip and a mini-thermoelectric cooler inside a butterfly package with a size of 12.5 mm × 22 mm × 10 mm. Moreover, we implement a monolithic readout circuit for the SWG SPD in order to replace the quenching electronics that is previously designed with board-level integration. Finally, the components of SPAD, the monolithic readout circuit, and the affiliated circuits are integrated into a single module with a size of 13 cm × 8 cm × 4 cm. Compared with the 1.25 GHz SWG InGaAs/InP SPD module (25 cm × 10 cm × 33 cm) designed in 2012, the volume of our miniaturized SPD is reduced by 95%. After the characterization, the SPD exhibits excellent performance with a photon detection efficiency of 30%, a dark count rate of 2.0 kcps, and an afterpulse probability of 8.8% under the conditions of 1.25 GHz gating rate, 100 ns hold-off time, and 243 K. Also, we perform the stability test over one week, and the results show the high reliability of the miniaturized SPD module.
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http://dx.doi.org/10.1063/1.5055376 | DOI Listing |
An integrated path differential absorption (IPDA) lidar for CH leakage monitoring is proposed and demonstrated. In the simplified all-fiber optical layout, a homemade InGaAs/InP single-photon detector (SPD) using multi-channel technique with multi-mode fiber coupling is used to increase the maximum count rate and coupling efficiency. The system is calibrated in intensity and frequency domains.
View Article and Find Full Text PDFRev Sci Instrum
April 2024
Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
InGaAs/InP-based negative-feedback avalanche diodes (NFADs) have been demonstrated to be an excellent option for photon detection at telecom wavelengths in quantum communication applications, where photon arrival times are random. However, it is well-known that the operation of NFADs at low temperatures (193 K or below) is crucial to minimize the effects of afterpulsing and high dark count rates (DCRs). In this work, we present a new versatile readout electronics system with active afterpulse suppression that also offers flexible cooling options.
View Article and Find Full Text PDFRev Sci Instrum
March 2024
Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China.
Single-photon time-of-flight (TOF) non-line-of-sight (NLOS) imaging enables the high-resolution reconstruction of objects outside the field of view. The compactness of TOF NLOS imaging systems, entailing the miniaturization of key components within such systems, is crucial for practical applications. Here, we present a miniaturized four-channel time-correlated single-photon counting module dedicated to TOF NLOS imaging applications.
View Article and Find Full Text PDFA near-infrared single-photon lidar system, equipped with a 64×64 resolution array and a Risley prism scanner, has been engineered for daytime long-range and high-resolution 3D imaging. The system's detector, leveraging Geiger-mode InGaAs/InP avalanche photodiode technology, attains a single-photon detection efficiency of over 15% at the lidar's 1064 nm wavelength. This efficiency, in tandem with a narrow pulsed laser that boasts a single-pulse energy of 0.
View Article and Find Full Text PDFNat Commun
January 2024
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Crosstalk has become an urgent issue for single-photon avalanche diode arrays. In previous work, trenches were introduced between pixels to block the crosstalk optical path in planar InGaAs/InP single-photon avalanche diode arrays, since the optical crosstalk was considered as the main crosstalk mechanism. However, the crosstalk suppression effect of this solution is not satisfactory.
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