Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane.

Doping is a powerful tool to control the majority charge carrier density in organic field-effect transistors and the threshold voltage of these devices. Here, a surface doping approach is shown, where the dopant is deposited on the prefabricated polycrystalline semiconducting layer. In this study, (tridecafluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane (FTCS), a fluorinated alkylsilane is used as a dopant, which is solution processable and much cheaper than conventional p-type dopants, such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). In this work, the depositions from the gas phase and from solution are compared. Both deposition approaches led to an increased conductivity and to a shift in the threshold voltage to more positive values, both of which indicate a p-type doping effect. The magnitude of the threshold voltage shift could be controlled by the FTCS deposition time (from vapor) or FTCS concentration (from solution); for short deposition times and low concentrations, the off current stayed constant and the mobility decreased only slightly. In the low doping concentration regime, both approaches resulted in similar transistor characteristics, i.e., similar values of shift in the threshold and turn-on voltage as well as mobility, I/ I ratio and amount of introduced free charge carriers. In comparison with vapor deposition, the solution-based approach can be conducted with less material and in a shorter time, which is critical for industrial applications.