AI Article Synopsis
- The energy band alignment of ZnO/β-GaO heterojunctions was analyzed using X-ray photoelectron spectroscopy (XPS).
- Type-I band alignment was observed in all samples, with conduction band offsets ranging from 1.26 to 1.47 eV and valence band offsets from 0.20 to 0.01 eV as growth temperature increased from 150 to 250 °C.
- The increase in conduction band offset is linked to Zn interstitials, while a defect type V + OH leads to reduced valence band offset, aiding in the design of electronic devices.
Article Abstract
The energy band alignment of ZnO/β-GaO ([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-GaO heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect V + OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/β-GaO relevant electronic devices.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6305258 | PMC |
| http://dx.doi.org/10.1186/s11671-018-2832-7 | DOI Listing |
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