Thin 2D MoC/graphene vertical heterostructures have attracted significant attention due to their potential application as electrodes in the hydrogen evolution reaction (HER) and energy storage. A common drawback in the chemical vapor deposition synthesis of these structures is the demand for high temperature growth, which should be higher than the melting temperature of the metal catalyst. The most common metallic catalyst is Cu, which has a melting temperature of 1084 °C. Here, we report the growth of thin, ∼200 nm in thickness, semitransparent micrometer-sized MoC domains and MoC/graphene heterostructures at lower temperatures using liquid Sn-Cu alloys. No Sn-associated defects are observed, making the alloy an appealing growth substrate. Raman spectroscopy reveals the vertical interaction between graphene and MoC, as shown by the variation in the strain of the graphene film. The results demonstrate the capability to grow continuous nanometer-thin MoC films at temperatures as low as 880 °C, without sacrificing the growth rate. MoC films are proven to be efficient electrocatalysts for the HER. Moreover, we demonstrate the beneficial role of graphene overgrown on MoC in reducing the HER overpotential values, which is attributed to more efficient charge transfer kinetics, compared to pure MoC films.
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http://dx.doi.org/10.1088/1361-6528/aaf9e8 | DOI Listing |
Nanoscale
December 2024
Department of Chemistry, KAIST, Daejeon 34141, Republic of Korea.
Metal-organic complexes (MOCs) have extensively been studied as prominent components in interface engineering. Once the designated missions of MOC films are achieved, or while they are still operational, it is preferred that the films undergo degradation on demand in certain circumstances. Current research on MOC-film degradation predominantly relies on chemical treatment, which can alter the states and conditions of specific systems.
View Article and Find Full Text PDFACS Nano
August 2020
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Refractory metals and their carbides possess extraordinary chemical and temperature resilience and exceptional mechanical strength. Yet, they are notoriously difficult to employ in additive manufacturing, due to the high temperatures needed for processing. State of the art approaches to manufacture these materials generally require either a high-energy laser or electron beam as well as ventilation to protect the metal powder from combustion.
View Article and Find Full Text PDFChemistry
May 2020
Department of Chemistry, Graduate School of Science, Nagoya University, Chikusa, Nagoya, 464-8602, Japan.
Owing to their remarkable properties, single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) are expected to be used in various flexible electronics applications. To fabricate SWCNT channel layers for TFTs, solution-based film formation on a self-assembled monolayer (SAM) covered with amino groups is commonly used. However, this method uses highly oxidized surfaces, which is not suitable for flexible polymeric substrates.
View Article and Find Full Text PDFJ Food Sci
September 2019
Dept. of Biological Systems Engineering, Washington State Univ., P.O. Box-646120, Pullman, WA, 99164-6120, USA.
Metal oxide coated multilayered polymeric pouches provide a suitable alternative to foil-based packaging for shelf-stable products with extended shelf-life. The barrier performance of these films depends upon the integrity of the metal oxide coating which can develop defects as a result of thermal processing and improper handling. In this work, we developed a methodology to visually identify these defects using an oxygen-sensitive model gel system.
View Article and Find Full Text PDFRSC Adv
April 2019
Technische Universität Chemnitz, Faculty of Natural Sciences, Institute of Chemistry, Inorganic Chemistry D-09107 Chemnitz Germany +49(0)371-531-21219 +49(0)371-531-21210.
The synthesis of complexes [M(OCHMeCHNMeCH)] (5, M = Mg; 7, M = Zn) is described. Treatment of MeHNCHCHNMeH (1) with 2-methyloxirane (2) gave diol (HOCHMeCHNMeCH) (3), which upon reaction with equimolar amounts of MR (4, M = Mg, R = Bu; 6, M = Zn, R = Et) gave 5 and 7. The thermal behavior and vapor pressure of 5 and 7 were investigated to show whether they are suited as CVD (= chemical vapor deposition) and/or spin-coating precursors for MgO or ZnO layer formation.
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