AI Article Synopsis
- The study explored bonding defects in amorphous silicon oxynitride (a-SiNO) that lead to high photoluminescence internal quantum efficiencies (PL IQEs) and rapid radiative recombination.
- The researchers used techniques like XPS, EPR, and temperature-dependent steady-state photoluminescence (TD-SSPL) to analyze luminescent N‒Si‒O bonding defects.
- They found that the PL IQE can exceed 72% and that the fast radiative recombination rates (~10⁸ s) depend on the concentration of these defects, indicating potential for stimulated light emission in a-SiNO materials.
Article Abstract
In this work, we systematically investigated the bonding defects that induced high photoluminescence internal quantum efficiencies (PL IQEs) and very fast radiative recombination processes in amorphous silicon oxynitride (a-SiNO) systems. The luminescent N‒Si‒O bonding-related defect states were checked for the XPS, EPR, and temperature-dependent steady-state PL (TD-SSPL) properties. The PL IQEs were calculated from PL quantum yields through the principle of planar geometry optics, and then confirmed by the TD-SSPL properties. The radiative recombination rates [(R)] were determined by combining the PL IQE values and ns-PL lifetimes obtained from time-resolved PL measurements. Both the PL IQE, exceeding 72%, and the fast (R) (~10⁸ s) are proportional to the concentration of defects, which can be explained by N‒Si‒O bonding states related to the quasi-three-level model, suggesting the possible realization of stimulated light emission in a-SiNO systems.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316973 | PMC |
| http://dx.doi.org/10.3390/ma11122494 | DOI Listing |
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