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High-Entropy Oxides: Pioneering the Future of Multifunctional Materials.
ACS Nano
December 2024
College of Textiles, Innovation Center for Textile Science and Technology, Donghua University, Shanghai 201620, China.
Article Synopsis
- * HEOs exhibit unique effects such as sluggish diffusion and severe lattice distortion, leading to improved mechanical, electrical, optical, thermal, and magnetic properties suitable for a variety of applications beyond catalysts and batteries.
- * The review discusses the structure and composition of HEOs, highlights their diverse applications (like transistors and photodetectors), and introduces future trends in intelligent design and high-throughput screening for optimized HEO development.
On the quality of commercial chemical vapour deposited hexagonal boron nitride.
Nat Commun
May 2024
Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with small thickness fluctuations, which is necessary to build electronic devices and circuits. However, CVD-grown 2D materials can contain significant amounts of lattice distortions, which degrades the performance at the device level and increases device-to-device variability. Here we statistically analyse the quality of commercially available CVD-grown hexagonal boron nitride (h-BN) from the most popular suppliers.
View Article and Find Full Text PDFNonvolatile Memristive Effect in Few-Layer CrI Driven by Electrostatic Gating.
Nano Lett
December 2023
Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States.
The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI-based tunnel junctions.
View Article and Find Full Text PDFEffect of oxygen vacancy and Si doping on the electrical properties of TaO in memristor characteristics.
Sci Rep
October 2023
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH, USA.
The resistive switching behavior in TaO based memristors is largely controlled by the formation and annihilation of conductive filaments (CFs) that are generated by the migration of oxygen vacancies (OVs). To gain a fundamental insight on the switching characteristics, we have systematically investigated the electrical transport properties of two different TaO polymorphs ([Formula: see text]-TaO and λ-TaO), using density functional theory calculations, and associated vacancy induced electrical conductivity using Boltzmann transport theory. The projected band structure and DOS in a few types of OVs, (two-fold (OV), three-fold (OV), interlayer (OV), and distorted octahedral coordinated vacancies (OV)) reveal that the presence of OV would cause TaO to transition from a semiconductor to a metal, leading to improved electrical conductivity, whereas the other OV types only create localized mid-gap defect states within the bandgap.
View Article and Find Full Text PDFNano -Se Peninsulas Embedded in Natively Oxidized 2D TiSe Enable Uniform and Fast Memristive Switching.
ACS Appl Mater Interfaces
May 2023
Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.
Memristive devices, regardless of their potential applications in memory and computing scenarios, still suffer from large cycle-to-cycle and device-to-device variations due to the stochastic growth of conductive filaments (CFs). In this work, we fabricated a crossbar memristor using the 2D TiSe material and then oxidized it into TiO in the atmosphere at a moderate temperature. Such a mild oxidation approach fails to evaporate all Se into the air, and after further annealing using thermal or electrical stimulations, the remnant Se atoms gather near the interfaces and grow into nanosized crystals with relatively high conductivity.
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