The stability of TiO/CHNHPbICl -based photovoltaic devices in ambient air was evaluated upon adding PbI and/or PbCl. X-ray diffraction (XRD) peak intensities corresponding to the perovskite phase were increased by adding PbI. After 7 weeks, the XRD peak intensities corresponding to the perovskite phase decreased and those corresponding to PbI increased. The reaction rate constants for the decomposition of perovskite and formation of PbI were estimated from these data. Thermodynamic calculations of the reaction between PbCl and I suggested that the formation of PbI was not related to the added PbCl but rather to excess PbI. Open-circuit voltages and fill factors of the devices were improved with the 7 week time lapse because of the suppression of electron-hole recombination by the PbI. In addition, the decomposition of perovskite grains was suppressed by the added PbI. The I content of the perovskite phase decreased with the 7 week time lapse. However, the Cl content was largely constant after the 7 weeks, which suggested that Cl doping effectively stabilized the perovskite photovoltaic devices.
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http://dx.doi.org/10.1021/acsami.8b16029 | DOI Listing |
J Phys Chem B
January 2025
Department of Life Science and Applied Chemistry, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.
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January 2025
Chair for Emerging Electronic Technologies, TUD Dresden University of Technology, Nöthnitzer Straße 61, 01187, Dresden, Germany.
The stability of perovskite quantum dot solar cells is one of the key challenges of this technology. This study reveals the unique degradation behavior of cesium lead triiodide (CsPbI) quantum dot solar cells. For the first time, it is shown that the oxygen-induced degradation and performance loss of CsPbI quantum dot photovoltaic devices can be reversed by exposing the degraded samples to humidity, allowing the performance to recover and even surpass the initial performance.
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January 2025
Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China.
The properties and device applications of 2D semiconductors are highly sensitive to intrinsic structural defects due to their ultrathin nature. CuInSe (CIS) materials own excellent optoelectronic properties and ordered copper vacancies, making them widely applicable in photovoltaic and photodetection fields. However, the synthesis of 2D CIS nanoflakes remains challenging due to the nonlayered structure, multielement composition, and the competitive growth of various by-products, which further hinders the exploration of vacancy-related optoelectronic devices.
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January 2025
Department of Physics and Materials Science, University of Luxembourg, Esch-sur-Alzette, L-4365, Luxembourg.
Cu(In, Ga)S demonstrates potential as a top cell material for tandem solar cells. However, achieving high efficiencies has been impeded by open-circuit voltage (V) deficits arising from In-rich and Ga-rich composition segregation in the absorber layer. This study presents a significant improvement in the optoelectronic quality of Cu(In, Ga)S films through the mitigation of composition segregation in three-stage co-evaporated films.
View Article and Find Full Text PDFJ Cosmet Dermatol
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