This paper analyses, the influence of Si₃N₄-PECVD and Al₂O₃-ALD surface passivation on the DC and RF characteristics of InP HEMTs with different gate lengths 0.08 m, 0.1 m, 0.12 m, and 0.15 m. A significant improvement in maximum drain current , transconductance and oscillation frequency is obtained by scaling the thickness of the passivation layers An increase in and , is observed by reducing parasitic capacitance w.r.t. the decrease in gate length. In addition, an analytical model of based on a small-signal equivalent circuit is developed, which consist of extrinsic parameters , , and and intrinsic parameters , , and . The carrier transport is improved by increasing , thus the transit time , the parasitic charging delay and the are reduced by lowering the extrinsic capacitances. An excellent fitting between measured and simulated is achieved, which inturn leads a realistic way for further improvement in .
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