AI Article Synopsis
- The study introduces a high positional freedom (HPF) grating coupler made from a single etch-step subwavelength grating (SWG) on a 220 nm silicon-on-insulator (SOI) substrate, designed specifically for 1550 nm light with TE polarization.
- This grating coupler achieves a maximum coupling efficiency of -7.49 dB (equivalent to 17.8%) and demonstrates impressive bandwidths of about 14 nm for -1 dB and 29.5 nm for -3 dB.
- It is notable for achieving the highest -1 dB single mode fiber lateral alignment reported, measuring 21.4 μm by 10.1 μ
Article Abstract
We present an apodized, single etch-step, subwavelength grating (SWG) high positional freedom (HPF) grating coupler based on the 220 nm silicon-on-insulator (SOI) with 2μm BOX substrate. The grating coupler was designed for 1550 nm light with transverse electric (TE) polarization. It has a measured maximum coupling efficiency of -7.49 dB (17.8%) and a -1 dB/-3 dB bandwidth of ~14 nm/29.5 nm respectively. It was fabricated in a 300mm state of the art CMOS foundry. This work presents an SOI-based grating coupler with the highest-to the best of our knowledge- -1 dB single mode fiber lateral alignment of 21.4 μm × 10.1 μm.
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| http://dx.doi.org/10.1364/OE.26.028773 | DOI Listing |
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