We present the enhanced performances of a vertical-illumination-type Ge-on-Si avalanche photodetector based on internal RF-gain effects operating up to 50 Gb/s. A fabricated Ge-on-Si avalanche photodetector (APD) exhibits three operational voltage regions associated with different aspects of the current (DC) gain and bandwidth characteristics. The measured current-voltage (I-V) curve of a Ge-on-Si APD exhibits a negative photoconductance (negative differential resistance [NDR]) in a high bias region beyond the avalanche breakdown voltage ( ), where a device shows good eye openings up to 50 Gb/s (non-return-to-zero [NRZ] signal) with further improved signal-to-noise ratios and signal amplitudes. A ROSA packaged module, wherein a fabricated Ge-on-Si APD is wire-bonded to a commercial TIA with a ∼75 optical alignment for ∼1310 and biased at a lower voltage than the , exhibits the sensitivities of -18.9 and -15.3 for 30 and 35 Gb/s, respectively, and -13.9 for 40 Gb/s at a 10 error rate. The experimental results indicate that considerable improvement in a module performance can be expected by utilizing the Ge-on-Si APD operated in the NDR region with a properly customized TIA.
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- The study explores the use of nano-hole array photonic crystal structures in Ge-on-Si single photon avalanche diodes (SPADs) to enhance their performance, specifically focusing on single photon detection efficiencies (SPDE).
- It highlights the need for research into the effects of these structures on SPDE and dark count rates, establishing a platform for optimization and analysis of photonic crystals within SPAD devices.
- Simulations indicate that optimized photonic crystal designs could significantly boost photon absorption to 37.09% at 1550 nm, potentially resulting in over 2.4 times higher SPDE and improved noise-equivalent power if surfaces are well-passivated.
We present experimental results of Ge-on-Si single-photon avalanche diodes based on a novel, to our knowledge, double mesa structure. Using this structure, the electric field at the mesa edges is suppressed compared to a traditional single mesa, leading to significant performance improvements. The dark current in linear mode shows a smaller increase for larger reverse voltages, resulting in a reduction by more than 260 times at low temperatures.
View Article and Find Full Text PDFGermanium-on-Silicon (Ge-on-Si) avalanche photodiodes (APDs) are of considerable interest as low intensity light detectors for emerging applications. The Ge absorption layer detects light at wavelengths up to ≈ 1600 nm with the Si acting as an avalanche medium, providing high gain with low excess avalanche noise. Such APDs are typically used in waveguide configurations as growing a sufficiently thick Ge absorbing layer is challenging.
View Article and Find Full Text PDFIn this Letter, we report a bridge-connected three-electrode germanium-on-silicon (Ge-on-Si) avalanche photodiode (APD) array compatible with the complementary metal-oxide semiconductor (CMOS) process. In addition to the two electrodes on the Si substrate, a third electrode is designed for Ge. A single three-electrode APD was tested and analyzed.
View Article and Find Full Text PDFHigh-performance waveguide coupled Germanium-on-silicon single-photon avalanche diode with independently controllable absorption and multiplication.
Nanophotonics
February 2023
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Germanium-on-silicon (Ge-on-Si) single photon avalanche diodes (SPADs) have received wide attention in recent years due to their potential to be integrated with Si photonics. In this work, we propose and demonstrate a high-performance waveguide coupled Ge-on-Si separate-absorption-charge-multiplication SPAD with three electric terminals. By providing two separate voltage drops on the light absorption and multiplication regions, the drift and multiplication of carriers can be optimized separately.
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