AI Article Synopsis
- The paper presents an enhanced large signal model for 0.1 µm AlGaN/GaN HEMTs, factoring in short channel effects like DIBL and channel length modulation for better DC characteristic accuracy.
- Validation of the model is conducted using in-house HEMTs, showing strong agreement between simulated results and actual measurements for S parameters, I-V characteristics, and performance at 28 GHz.
- Additionally, a MMIC power amplifier is designed to operate between 92 GHz and 96 GHz, confirming that the improved model is applicable at frequencies up to the W band.
Article Abstract
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6187807 | PMC |
| http://dx.doi.org/10.3390/mi9080396 | DOI Listing |
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