AI Article Synopsis
- The study focuses on creating an indium-zinc-tin-oxide (IZTO) transparent conductive film using DC reactive magnetron sputtering, evaluating its electrical, structural, and optical properties.
- The IZTO film made at 100 W power achieved the lowest resistivity of 5.2 × 10 Ω cm, indicating excellent conductivity.
- An electrochromic device (ECD) with a WO₃ electrode and Pt mesh counter-electrode demonstrated a significant optical contrast of 44% with quick switching times of 4.6 s for coloring and 8.1 s for bleaching at 550 nm.
Article Abstract
This paper reports on the fabrication of indium-zinc-tin-oxide (IZTO) transparent conductive film deposited by direct current (DC) reactive magnetron sputtering. The electrical, structural, and optical properties of IZTO film were investigated by Hall measurement, X-ray diffraction (XRD), and optical transmission spectroscopy with various sputtering powers. The IZTO film prepared used power at 100 W showed the lowest resistivity of 5.2 × 10 Ω cm. To accomplish rapid switching and high optical modulation, we have fabricated an electrochromic device (ECD) consisting of an working electrode (WO₃ electrode film deposited on IZTO/ITO/glass) and a counter-electrode (Pt mesh) in 0.2 M LiClO₄/PC liquid solution. The device demonstrated an optical contrast of 44% and switching times of 4.6 s and 8.1 s for the coloring and bleaching state, respectively, at the wavelength of 550 nm.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6265803 | PMC |
| http://dx.doi.org/10.3390/ma11112221 | DOI Listing |
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