The properties of many materials can be strongly affected by the atomic valence of the contained individual elements, which may vary at surfaces and other interfaces. These variations can have a critical impact on material performance in applications. A non-destructive method for the determination of layer-by-layer atomic valence as a function of material thickness is presented for LaSrMnO (LSMO) thin films. The method utilizes a combination of bulk- and surface-sensitive X-ray absorption spectroscopy (XAS) detection modes; here, the modes are fluorescence yield and surface-sensitive total electron yield. The weighted-average Mn atomic valence as measured from the two modes are simultaneously fitted using a model for the layer-by-layer variation of valence based on theoretical model Hamiltonian calculations. Using this model, the Mn valence profile in LSMO thin film is extracted and the valence within each layer is determined to within an uncertainty of a few percent. The approach presented here could be used to study the layer-dependent valence in other systems or extended to different properties of materials such as magnetism.
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http://dx.doi.org/10.1107/S1600577518011724 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
To date, III-V semiconductor-based tandem devices with GaInP top photoabsorbers show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In photoelectrochemical (PEC) cells, however, III-V semiconductors are sensitive, in terms of photochemical stability and, therefore, require suitable functional layers for electronic and chemical passivation. GaN films are discussed as promising options for this purpose.
View Article and Find Full Text PDFACS Nano
January 2025
IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States.
Lanthanide atoms show long magnetic lifetimes because of their strongly localized 4 electrons, but electrical control of their spins has been difficult because of their closed valence shell configurations. We achieved electron spin resonance of individual lanthanide atoms using a scanning tunneling microscope to probe the atoms bound to a protective insulating film. The atoms on this surface formed a singly charged cation state having an unpaired 6 electron, enabling tunnel current to access their 4 electrons.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
AIMR, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8578, JAPAN.
Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3×√3)R30º superstructure associated with the formation of ⍺-Sb, and exhibits a semiconducting nature with a band gap of more than 1.
View Article and Find Full Text PDFJ Chem Theory Comput
January 2025
Technische Universitát Berlin, Institut für Chemie, Theoretische Chemie/Quantenchemie, Sekr. C7, Straße des 17. Juni 135, Berlin D-10623, Germany.
Local hybrid functionals (LHs) use a real-space position-dependent admixture of exact exchange (EXX), governed by a local mixing function (LMF). The systematic construction of LMFs has been hampered over the years by a lack of exact physical constraints on their valence behavior. Here, we exploit a data-driven approach and train a new type of "n-LMF" as a relatively shallow neural network.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
School of Physical and Applied Sciences, Goa University, Taleigao Plateau, Goa, India.
NiMnZ (Z = In, Sn or Sb) undergo martensitic transformation with transformation temperature () scaling with the average valence electron per atom (/) ratio. However, the rate of increase of depends on the type of Z atom, with the slope of / curve increasing from Z = In to Z = Sb. Local structural distortions are believed to be the leading cause of martensitic transformation in these alloys.
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