Metal-induced layer-exchange growth of amorphous carbon (a-C) is a unique technique for fabricating high-quality, uniform multilayer graphene (MLG) directly on an insulating material. Here, we investigated the effect of transition-metal species on the interaction between metals and a-C in the temperature range of 600-1000 °C. As a result, metals were classified into four groups: (1) layer exchange (Co, Ni, Cr, Mn, Fe, Ru, Ir, and Pt), (2) carbonization (Ti, Mo, and W), (3) local MLG formation (Pd), and (4) no graphitization (Cu, Ag, and Au). Some layer-exchange metals allowed for low-temperature MLG synthesis at 600 °C, whereas others allowed for high-quality MLG with a Raman G/D peak ratio of up to 8.3. Based on the periodic table, we constructed metal selection guidelines for growing MLG on an insulator, opening the door for applications that combine advanced electronic devices with carbon materials.
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