Nonvolatile and Programmable Photodoping in MoTe for Photoresist-Free Complementary Electronic Devices.

2D transition-metal dichalcogenide (TMD)-based electronic devices have been extensively explored toward the post-Moore era. Huge efforts have been devoted to modulating the doping profile of TMDs to achieve 2D p-n junctions and inverters, the fundamental units in logic circuits. Here, photoinduced nonvolatile and programmable electron doping in MoTe based on a heterostructure of MoTe and hexagonal boron nitride (BN) is reported. The electron transport property in the MoTe device can be precisely controlled by modulating the magnitude of the photodoping gate exerted on BN. Through tuning the polarity of the photodoping gate exerted on BN under illumination, such a doping effect in MoTe can be programmed with excellent repeatability and is retained for over 14 d in the absence of an external perturbation. By spatially controlling the photodoping region in MoTe , a photoresist-free p-n junction and inverter in the MoTe homostructure are achieved. The MoTe diode exhibits a near-unity ideality factor of ≈1.13 with a rectification ratio of ≈1.7 × 10 . Moreover, the gain of the MoTe inverter reaches ≈98, which is among the highest values for 2D-material-based homoinverters. These findings promise photodoping as an effective method to achieve 2D-TMDs-based nonvolatile and programmable complementary electronic devices.