We identify graphene layer on a disordered substrate as a system where localization of phonons can be observed. Generally, observation of localization for scattering waves is not simple, because the Rayleigh scattering is inversely proportional to a high power of wavelength. The situation is radically different for the out of plane vibrations, so-called flexural phonons, scattered by pinning centers induced by a substrate. In this case, the scattering time for vanishing wave vector tends to a finite limit. One may, therefore, expect that physics of the flexural phonons exhibits features characteristic for electron localization in two dimensions, albeit without complications caused by the electron-electron interactions. We confirm this idea by calculating statistical properties of the Anderson localization of flexural phonons for a model of elastic sheet in the presence of the pinning centers. Finally, we discuss possible manifestations of the flexural phonons, including the localized ones, in the electronic thermal conductance.
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http://dx.doi.org/10.1038/s41598-018-34426-3 | DOI Listing |
Phys Rev Lett
September 2024
L. D. Landau Institute for Theoretical Physics, Semenova 1-a, 142432 Chernogolovka, Russia.
We develop the microscopic theory for the attenuation of out-of-plane phonons in stressed flexible two-dimensional crystalline materials. We demonstrate that the presence of nonzero tension strongly reduces the relative magnitude of the attenuation and, consequently, results in parametrical narrowing of the phonon spectral line due to stress-controlled suppression of the retardation effects in the dynamically screened inter phonon interaction. We predict the specific power-law dependence of the spectral-line width on temperature and tension.
View Article and Find Full Text PDFPhys Rev E
August 2024
L. D. Landau Institute for Theoretical Physics, Semenova 1-a, Chernogolovka 142432, Russia.
We investigate the elastic behavior of two-dimensional crystalline membrane embedded into real space taking into account the presence an arbitrary number of flexural phonon modes d_{c} (the number of out-of-plane deformation field components). The bending rigidity exponent η is extracted by numerical simulation via Fourier Monte Carlo technique of the system behavior in the universal regime. This universal quantity governs the correlation function of out-of-plane deformations at long wavelengths and defines the behavior of renormalized bending rigidity at small momentum ϰ∼1/q^{η}.
View Article and Find Full Text PDFAdv Mater
November 2024
Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA.
Phys Chem Chem Phys
August 2024
High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai, India.
This work delves into a methodology of modeling 2D materials and their structural engineering, considering an example of a recently synthesized 2D polyaramid (2DPA-1). A bottom-up approach similar to experimental techniques is implemented for modeling, and then its electronic structures and phonon spectrum and the quadratic nature of flexural phonons are analyzed. Furthermore, boron and nitrogen atoms are substituted for the carbon atom of the amide group of 2DPA-1, and their effects on its electronic properties, phonon spectrum, and mechanical properties are compared with those of pristine 2DPA-1 using density functional theory calculations.
View Article and Find Full Text PDFNanoscale
July 2024
School of Aerospace and Mechanical Engineering, University of Oklahoma, Norman, OK, USA.
Recent research has shed light on the importance of four-phonon scattering processes in the thermal conductivity () of 2D materials. The inclusion of 4 phonon scattering processes from first-principles has been shown to lead to a thermal conductivity of ∼1290 W m K in graphene at 300 K, significantly lower than the values predicted to be in excess of 4000 W m K based only on 3 phonon scattering processes. Four phonon processes are shown to be most significant for flexural ZA phonon modes, where the reflection symmetry selection rule (RSSR) is less restrictive for 4-phonon than 3-phonon scattering processes.
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