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Genome duplication improves the resistance of watermelon root to salt stress. | LitMetric

Genome duplication improves the resistance of watermelon root to salt stress.

Plant Physiol Biochem

Zhengzhou Fruit Research Institute, Chinese Academy of Agricultural Sciences, Zhengzhou, 450009, PR China. Electronic address:

Published: December 2018

Salinity is a major abiotic stress factor that affects crop productivity. Roots play an important role in salt stress in plants. Watermelon is a salt-sensitive crop; however, tetraploid watermelon seedlings are more tolerant to salt stress than their homogenotype diploid ancestors. To obtain insights into the reasons underlying the differences in salt tolerance with respect to the ploidy of plants, self-grafted and cross-grafted diploid and tetraploid watermelon seedlings were exposed to 300 mM NaCl for 8 days. After the treatment, the tetraploid rootstock-grafted watermelon plants showed higher salt stress tolerance than the diploid plants. There were no significant differences in the physiological effects between the rootstocks with the same ploidy. The tetraploid rootstock-grafted watermelon plants exhibited higher net photosynthetic rate, leaf stomatal conductance and transpiration rate than the diploid rootstock-grafted watermelon plants throughout the salt treatment process. The activities of antioxidant enzymes and contents of osmoregulatory compounds in the roots were higher in the tetraploid rootstock-grafted watermelon plants than in the diploid plants during the entire salt response process. Higher Na/K ratio was found in all parts of diploid rootstock-grafted watermelon, especially in the roots, K and Na were preferentially accumulated in the aerial parts (leaves and stem) than in the roots, which might be driven by the Na/H antiporter, as evidenced by the higher transcript levels for SOS, PMA1, HKT1 and NHX1 in the roots. Taken together, our results suggest that genome duplication improves the resistance of watermelon root to salt stress.

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Source
http://dx.doi.org/10.1016/j.plaphy.2018.10.019DOI Listing

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