In this Letter, we investigate the nonlinear effects of extremely intense few-cycle terahertz (THz) pulses (generated from the organic crystal 4-NN, NN-dimethylamino-44-NN-methyl-stilbazolium 2, 4, 6 trimethylbenzenesulfonate, with peak electrical fields of a few MV/cm) on the carrier dynamics in n-doped semiconductor thin film InGaAs. By performing open-aperture Z-scan measurements and recording the transmitted THz energy through semiconductor sample, we observed a strong THz absorption bleaching effect at high fields, followed by an absorption enhancement at even higher fields. We attribute our observations to a crossover from pure intraband carrier dynamics to an interplay between intraband carrier heating and interband carrier generations.
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| http://dx.doi.org/10.1364/OL.43.005463 | DOI Listing |
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