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The observation of regular ( h0 l) planar defects in α-MoO crystals can be traced back to over 60 years ago. Two mechanisms have been proposed to interpret the formation of the planar defects. One is related to the diffusion of oxygen vacancies because of thermal-driven release of oxygen atoms in vacuum and the consequent crystallographic shear of α-MoO. The other is associated with redox reactions of moisture and/or hydrocarbons that give rise to H MoO precipitates. Here, we report that regularly spaced (302) planar defects can be introduced into α-MoO belt crystals by heating in liquid sulfur at 300 °C. These defects are undetectable by both atomic force microscopy and scanning electron microscopy at the crystal surface. Raman scattering enhancement and weakening have been observed for different phonon modes of α-MoO at the (302) planar defects as probed from the (010) surface. Their comparisons with the Raman scattering enhancements at the edges and the argon-plasma-induced Raman spectral evolutions of the as-grown α-MoO belt crystals provide new insights into the planar defects with regard to their formation and characteristics.
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http://dx.doi.org/10.1021/acs.langmuir.8b03102 | DOI Listing |
Ann Intern Med
December 2024
The Genetics Institute and Genomics Center, Tel Aviv Sourasky Medical Center, and School of Medicine, Faculty of Medical and Health Sciences, Tel Aviv University, Tel Aviv, Israel (H.B.F.).
Background: Yellow nail syndrome (YNS) is a rare disorder characterized by a triad of yellow dystrophic nails, lymphedema, and chronic lung disease. Most patients present in adulthood, with only a few congenital or familial cases described. The cause of YNS remains largely unknown, although defects in lymphatic vessel development are suggested to play a significant role.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Section of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, University Campus, 15784 Athens, Greece.
The rational design of photonic crystal photocatalysts has attracted significant interest in order to improve their light harvesting and photocatalytic performances. In this work, an advanced approach to enhance slow light propagation and visible light photocatalysis is demonstrated for the first time by integrating a planar defect into CoO-TiO inverse opals. Trilayer photonic crystal films were fabricated through the successive deposition of an inverse opal TiO underlayer, a thin titania interlayer, and a photonic top layer, whose visible light activation was implemented through surface modification with CoO nanoscale complexes.
View Article and Find Full Text PDFJ Magn Reson Imaging
December 2024
Department of Radiology, Huashan Hospital, State Key Laboratory of Medical Neurobiology, Fudan University, Shanghai, China.
Background: Previous studies have shown neurovascular coupling (NVC) dysfunction in epilepsy, suggesting its role in the pathological mechanisms. However, it remains unclear whether NVC abnormalities exist in epilepsy of unknown etiology (EU).
Purpose: To integrate multiparametric MRI to assess NVC and its relationship with cognition in early-onset and late-onset EU patients.
Phys Chem Chem Phys
December 2024
Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
Using density functional theory (DFT) calculations we thoroughly explored the influence of grain boundaries (GBs) in monolayer MoS composed of S-polar (S5|7), Mo-polar (Mo5|7), and (4|8) edge dislocation, as well as an edge dislocation-double S vacancy complex (S4|6), and a dislocation-double S interstitial complex (S6|8), respectively, on the electronic properties of MoS and the Schottky barrier height (SBH) in MoS@Au heterojunctions. Our findings demonstrate that GBs formed by edge dislocations can significantly reduce the SBH in defect-free MoS, with the strongest effect for zigzag (4|8) GBs (-20% reduction) and the weakest for armchair (5|7) GBs (-10% reduction). In addition, a larger tilt angle in the GBs leads to a more pronounced decrease in the SBH, suggesting that the modulation of SBH in the MoS@Au heterostructure and analogous systems can be accomplished by GB engineering.
View Article and Find Full Text PDFSmall
December 2024
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Introducing uniform magnetic order in two-dimensional (2D) topological insulators by constructing heterostructures of TI and magnet is a promising way to realize the high-temperature Quantum Anomalous Hall effect. However, the topological properties of 2D materials are susceptible to several factors that make them difficult to maintain, and whether topological interface states (TISs) can exist at magnetic-topological heterostructure interfaces is largely unknown. Here, it is experimentally shown that TISs in a lateral heterostructure of CrTe/Bi(110) are robust against disorder, defects, high magnetic fields (time-reversal symmetry-breaking perturbations), and elevated temperature (77 K).
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