Microwave-induced thermal curing is demonstrated to improve the reliability and to prolong the lifetime of chips containing nanoscale electron devices. A film containing graphite powder with high microwave absorbing efficiency was fabricated at low cost. The film is flexible, bendable, foldable, and attachable to a chip. A commercial off-the-shelf chip and a representative 3-dimensional (3D) metal-oxide-semiconductor field-effect transistor (MOSFET), known as FinFET, were utilized to verify the curing behaviors of the microwave-induced heat treatment. The heat effectively cured not only total ionizing dose (TID) damage from the external environment, but also internal electrical stress such as hot-carrier injection (HCI), which are representative sources of damages in MOSFET insulators. Then, the characteristics of the pre- and post-curing electron devices are investigated using electrical measurements and numerical simulations.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6175829PMC
http://dx.doi.org/10.1038/s41598-018-33309-xDOI Listing

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