The production of high-quality thin-film insulators is essential to develop advanced technologies based on electron tunneling. Current insulator deposition methods, however, suffer from a variety of limitations, including constrained substrate sizes, limited materials options, and complexity of patterning. Here, we report the deposition of large-area AlO films by a solution process and its integration in metal-insulator-metal devices that exhibit I- V signatures of Fowler-Nordheim electron tunneling. A unique, high-purity precursor based on an aqueous solution of the nanocluster flat-Al transforms to thin AlO insulators free of the electron traps and emission states that commonly inhibit tunneling in other films. Tunneling is further confirmed by the temperature independence of device current.
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