Physical and chemical data of WS platelets and thickness-dependent photoresponses.

Data Brief

Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, Republic of Korea.

Published: October 2018

In this data article, the properties of WS/ZnO type-I heterostructure which corresponds to the research article "Vertically trigonal WS layer embedded heterostructure for enhanced ultraviolet-visible photodetector" (Nguyen et al., 2018) are presented by characteristics of WS layer, diode properties, and thickness dependent photoresponses. The device performances under the effect of rapid thermal processing (RTP) is presented. The WS platelets grown by large area sputtering method (Nguyen et al., 2018) was characterized in term of morphology and chemical elements distribution by using transmission electron microscope (TEM), energy dispersive spectroscopy (EDS) and X-Ray photoelectron spectroscopy (XPS). Diode characterization of WS/ZnO like rectifying ratio, ideal factor and barrier height are presented. The variation of photocurrent of ITO/WS/ZnO/FTO/glass photodetector, its dependence on the WS thickness and influence of post- thermal treatment are presented.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6143772PMC
http://dx.doi.org/10.1016/j.dib.2018.08.118DOI Listing

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