We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (∼10 nm) AlO/TiO heterostructure interface grown via atomic layer deposition (ALD) on a SiO/Si substrate without using a single crystal substrate. The 2DEG at the AlO/TiO interface originates from oxygen vacancies generated at the surface of the TiO bottom layer during ALD of the AlO overlayer. High-density electrons (∼10 cm) are confined within a ∼2.2 nm distance from the AlO/TiO interface, resulting in a high on-current of ∼12 μA/μm. The ultrathin TiO bottom layer is easy to fully deplete, allowing an extremely low off-current, a high on/off current ratio over 10, and a low subthreshold swing of ∼100 mV/decade. Via the implementation of ALD, a mature thin-film process can facilitate mass production as well as three-dimensional integration of the devices.
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