Heterojunctions formed from low-dimensional materials can result in photovoltaic and photodetection devices displaying exceptional physical properties and excellent performance. Herein, a mixed-dimensional van der Waals (vdW) heterojunction comprising a 1D n-type Ga-doped CdS nanowire and a 2D p-type MoTe flake is demonstrated; the corresponding photovoltaic device exhibits an outstanding conversion efficiency of 15.01% under illumination with white light at 650 µW cm . A potential difference of 80 meV measured, using Kelvin probe force microscopy, at the CdS-MoTe interface confirms the separation and accumulation of photoexcited carriers upon illumination. Moreover, the photodetection characteristics of the vdW heterojunction device at zero bias reveal a rapid response time (<50 ms) and a photoresponsivity that are linearly proportional to the power density of the light. Interestingly, the response of the vdW heterojunction device is negligible when illuminated at 580 nm; this exceptional behavior is presumably due to the rapid rate of recombination of the photoexcited carriers of MoTe . Such mixed-dimensional vdW heterojunctions appear to be novel design elements for efficient photovoltaic and self-driven photodetection devices.
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http://dx.doi.org/10.1002/smll.201802302 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea.
Multivalued logic (MVL) systems, in which data are processed with more than two logic values, are considered a viable solution for achieving superior processing efficiency with higher data density and less complicated system complexity without further scaling challenges. Such MVL systems have been conceptually realized by using negative transconductance (NTC) devices whose channels consist of van der Waals (vdW) heterojunctions of low-dimensional semiconductors; however, their circuit operations have not been quite ideal for driving multiple stages in real circuit applications due to reasons such as a reduced output swing and poorly defined logic states. Herein, we demonstrate ternary inverter circuits with near rail-to-rail swing and three distinct logic states by employing vdW p-n heterojunctions of single-walled carbon nanotubes (SWCNT) and MoS where the SWCNT layer completely covers the MoS layer.
View Article and Find Full Text PDFACS Nano
January 2025
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao 066004, China.
Moiré superlattices, created by stacking different van der Waals materials at twist angles, have emerged as a versatile platform for exploring intriguing phenomena such as topological properties, superconductivity, the quantum anomalous Hall effect, and the unconventional Stark effect. Additionally, the formation of moiré superlattice potential can generate spontaneous symmetry breaking, leading to an anisotropic optical response and electronic transport behavior. Herein, we propose a two-step chemical vapor deposition (CVD) strategy for synthesizing WS/SbS moiré superlattices.
View Article and Find Full Text PDFSmall
December 2024
Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain.
The burgeoning field of 2D heterostructures targets the combination of 2D materials with 3D, 1D, or 0D nanomaterials. Among the most popular 2D materials, the 2H polytype of molybdenum disulfide (MoS) features a well-defined bandgap that becomes direct at the monolayer level, which can be exploited for photodetection. A notable limitation of 2H-MoS is its curtailed absorbance beyond the visible range.
View Article and Find Full Text PDFNanophotonics
December 2023
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
Mixed dimensional van der Waals heterostructure based on layered two-dimensional molybdenum disulfide (MoS) interfaced to gallium nitride (GaN) has attracted tremendous attention due to its unique properties and application in novel electronic, optoelectronic, and quantum devices. However, developing facile synthesis methods and insights into the exciton dynamics for this system still remains a major challenge. Here, a simple and cost-effective method is demonstrated for large-scale synthesis of monolayer MoS on differently doped GaN substrates.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2024
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China.
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