Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides.

Sci Rep

Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, 18015, USA.

Published: September 2018

Metal-nitrides of hafnium nitride (HfN), zirconium nitride (ZrN) and titanium nitride (TiN) are investigated as plasmonic materials to enhance the internal quantum efficiency of a GaN:Eu red light emitter. Theoretical calculations are performed to evaluate the surface plasmon polariton dispersion relation and Purcell enhancement factor for a single metal-nitride layer on top of the GaN:Eu emitter. Our findings suggest that among the metal-nitrides investigated in this study, TiN is the most promising candidate for use as plasmonic material to increase the internal quantum efficiency in GaN:Eu red light emitters.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6127094PMC
http://dx.doi.org/10.1038/s41598-018-31821-8DOI Listing

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