High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent.
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http://dx.doi.org/10.1038/s41565-018-0245-5 | DOI Listing |
Adv Mater
December 2024
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA.
Waveguide interconnect coupling control is essential for enhancing the chip density of photonic integrated circuits to incorporate a growing number of components. However, a critical engineering challenge is to achieve both strong waveguide isolation and efficient long-range coupling on a single chip. Here, a novel photonic supercoupling phenomenon is demonstrated for waveguide coupling over separation distances from a quarter to five wavelengths (λ), leveraging the tunable mode tails and the vortex energy flow in topological valley Hall system.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Université de Bordeaux, CNRS, Bordeaux INP, ICMCB, UMR 5026, Pessac F-33600, France.
Femtosecond laser inscription in a ytterbium-doped silver-containing phosphate glass is demonstrated by achieving 3D highly localized laser-induced silver photochemistry. The produced fluorescent silver nanoclusters lead to high optical contrast in the visible range, showing that the coinsertion of Yb ions is not detrimental to the silver-based photochemistry. We demonstrate efficient energy transfer from these silver nanoclusters to the rare-earth Yb ions, leading to near-IR background-free fluorescence emission.
View Article and Find Full Text PDFNanoscale
December 2024
Department of Chemistry, University at Buffalo, SUNY, New York 14260, USA.
Multiphoton upconversion lasing in scattering gain media has attracted considerable attention in recent years. LAPONITE® is a scattering medium consisting of 2-D nano-discs that can be dispersed as a transparent solution in aqueous media and forms a gel at high concentration. In this paper, we demonstrate two-photon pumped upconversion regular lasing along forward and backward directions as well as random lasing along all other directions.
View Article and Find Full Text PDFNanophotonics
July 2024
School of Physics, The University of Sydney, Sydney, Australia.
As the demand for smaller and more compact lasers increases, the physical dimensions of laser diodes are already at the diffraction limit, which impairs this miniaturization trend and limits direct laser integration into photonic and especially nanophotonic circuits. However, plasmonics has allowed the development of a novel class of lasers that can be manufactured without being limited by diffraction, exhibiting ultralow energy consumption, small volumes, and high modulation speeds that could someday compete with their modern macroscale counterparts. Nevertheless, a wide variety of issues create roadblocks for further development and commercial adoption.
View Article and Find Full Text PDFNat Commun
December 2024
Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52428, Juelich, Germany.
Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.
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