Hexagonal boron nitride (h-BN) is an ideal substrate for two-dimensional (2D) materials because of its unique electrically insulating nature, atomic smoothness and low density of dangling bonds. Although mechanical exfoliation from bulk crystals produces the most pristine flakes, scalable fabrication of devices is still dependent on other more direct synthetic routes. To date, the most utilized method to synthesize large-area h-BN films is by chemical vapor deposition (CVD) using catalytic metal substrates. However, a major drawback for such synthetic films is the manifestation of thermally-induced wrinkles, which severely disrupt the smoothness of the h-BN films. Here, we provide a detailed characterization study of the microstructure of h-BN wrinkles and demonstrate an effective post-synthesis smoothening route by thermal annealing in air. The smoothened h-BN film showed an improved surface smoothness by up to 66% and resulted in a much cleaner surface due to the elimination of polymer residues with no substantial oxidative damage to the film. The unwrinkling effect is attributed to the hydroxylation of the h-BN film as well as the substrate surface, resulting in a reduction in adhesion energy at the interface. Dehydroxylation occurs over time under ambient conditions at room temperature and the smoothened film can be restored back with the intrinsic properties of h-BN. This work provides an efficient route to achieve smoother h-BN films, which are beneficial for high-performance 2D heterostructure devices.
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http://dx.doi.org/10.1039/c8nr03984d | DOI Listing |
Molecules
November 2024
Institute of Materials Science, Kaunas University of Technology, K. Baršausko St. 59, LT-51423 Kaunas, Lithuania.
In the present research, hexagonal boron nitride (h-BN) films were deposited by reactive high-power impulse magnetron sputtering (HiPIMS) of the pure boron target. Nitrogen was used as both a sputtering gas and a reactive gas. It was shown that, using only nitrogen gas, hexagonal-boron-phase thin films were synthesized successfully.
View Article and Find Full Text PDFMaterials (Basel)
October 2024
Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland.
Hexagonal boron nitride (h-BN) is recognized as a 2D wide bandgap material with unique properties, such as effective photoluminescence and diverse lattice parameters. Nitride alloys containing h-BN have the potential to revolutionize the electronics and optoelectronics industries. The energy band structures of three boron-containing nitride alloys-BAlN, BGaN, and BInN-were calculated using standard density functional theory (DFT) with the hybrid Heyd-Scuseria-Ernzerhof (HSE) function to correct lattice parameters and energy gaps.
View Article and Find Full Text PDFSmall
December 2024
CNRS, Georgia Tech - CNRS IRL 2958, 2 rue Marconi, Metz, 57070, France.
Hexagonal boron nitride (h-BN) bubbles are of significant interest to micro-scale hydrogen storage thanks to their ability to confine hydrogen gas molecules. Previous reports of h-BN bubble creation from grown h-BN films require electron beams under vacuum, making integrating with other experimental setups for hydrogen production impractical. Therefore, in this study, the formation of h-BN bubbles is demonstrated in a 20 nm h-BN film grown on a sapphire substrate with a 213 nm UV laser beam.
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September 2024
Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan.
Phys Chem Chem Phys
July 2024
Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China.
During the process of synthesizing h-BN on Cu foil chemical vapor deposition (CVD), low-pressure CVD (LPCVD) typically synthesizes monolayer h-BN films, whereas atmospheric pressure CVD (APCVD) yields few-layer h-BN films. Herein, a growth mechanism for monolayer and few-layer h-BN on Cu foil is proposed using first-principles calculations: Cu(111) passivated h-BN hinders the diffusion of B and N atoms at the subsurface of Cu(111), preventing sufficient transportation of B and N atoms to the existing h-BN layer, thereby leading to the formation of monolayer h-BN in LPCVD. For APCVD, the edges of h-BN are passivated by H, which decreases the barrier energy for the diffusion of B and N atoms on the Cu(111) subsurface, and B and N atoms can easily migrate from the subsurface of Cu(111) to its surface, resulting in the nucleation of h-BN between the existing h-BN and Cu(111), and leading to the formation of few-layer h-BN films.
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