Photonic switches are increasingly considered for insertion in high performance datacenter architectures to meet the growing performance demands of interconnection networks. We provide an overview of photonic switching technologies and develop an evaluation methodology for assessing their potential impact on datacenter performance. We begin with a review of three categories of optical switches, namely, free-space switches, III-V integrated switches and silicon integrated switches. The state-of-the-art of MEMS, LCOS, SOA, MZI and MRR switching technologies are covered, together with insights on their performance limitations and scalability considerations. The performance metrics that are required for optical switches to truly emerge in datacenters are discussed and summarized, with special focus on the switching time, cost, power consumption, scalability and optical power penalty. Furthermore, the Pareto front of the switch metric space is analyzed. Finally, we propose a hybrid integrated switch fabric design using the III-V/Si wafer bonding technique and investigate its potential impact on realizing reduced cost and power penalty.
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http://dx.doi.org/10.1364/OE.26.016022 | DOI Listing |
Phys Rev Lett
December 2024
University of Strathclyde, Institute of Photonics, SUPA Dept of Physics, Glasgow, United Kingdom.
We report a spiking flip-flop memory mechanism that allows controllably switching between neural-like excitable spike-firing and quiescent dynamics in a resonant tunneling diode (RTD) neuron under low-amplitude (<150 mV pulses) and high-speed (ns rate) inputs pulses. We also show that the timing of the set-reset input pulses is critical to elicit switching responses between spiking and quiescent regimes in the system. The demonstrated flip-flop spiking memory, in which spiking regimes can be controllably excited, stored, and inhibited in RTD neurons via specific low-amplitude, high-speed signals (delivered at proper time instants) offers high promise for RTD-based spiking neural networks, with the potential to be extended further to optoelectronic implementations where RTD neurons and RTD memory elements are deployed alongside for fast and efficient photonic-electronic neuromorphic computing and artificial intelligence hardware.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington 6012, New Zealand.
The organic semiconductor Y6 has been extensively used as an acceptor in organic photovoltaic devices, yielding high efficiencies. Its unique properties include a high refractive index, intrinsic exciton dissociation, and barrierless charge generation in bulk heterojunctions. However, the direct impact of the crystal packing morphology on the photophysics of Y6 has remained elusive, hindering further development of heterojunction and homojunction devices.
View Article and Find Full Text PDFThe PT-symmetric waveguides have been frequently discussed in the photonics community due to their extraordinary properties. Especially, the study of power transmission is significant for switching applications. The aim of this study is to extract the mode power transmission parameters based on the coupled mode equations and analyze the power properties of the PT-symmetric system.
View Article and Find Full Text PDFWe analyze the single-photon band structure and the transport of a single photon in a one-dimensional coupled-spinning-resonator chain. The time-reversal symmetry of the resonators chain is broken by the spinning of the resonators, instead of external or synthetic magnetic field. Two nonreciprocal single-photon band gaps can be obtained in the coupled-spinning-resonator chain, whose width depends on the angular velocity of the spinning resonator.
View Article and Find Full Text PDFA three-sectioned, bidirectionally coupled, tunable, optical comb source is presented. The photonic integrated circuit (PIC) consists of a gain section, a slotted mirror section and a Fabry-Perot (FP) section. Optical frequency combs (OFCs) are produced by gain switching the FP section via a high power radio frequency (RF) signal.
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