As previously demonstrated, contact-electrification (CE) is strongly dependent on temperature, however the highest temperature in which a triboelectric nanogenerator (TENG) can still function is unknown. Here, by designing and preparing a rotating free-standing mode Ti/SiO TENG, the relationship between CE and temperature is revealed. It is found that the dominant deterring factor of CE at high temperatures is the electron thermionic emission. Although it is normally difficult for CE to occur at temperatures higher than 583 K, the working temperature of the rotating TENG can be raised to 673 K when thermionic emission is prevented by direct physical contact of the two materials via preannealing. The surface states model is proposed for explaining the experimental phenomenon. Moreover, the developed electron cloud-potential well model accounts for the CE mechanism with temperature effects for all types of materials. The model indicates that besides thermionic emission of electrons, the atomic thermal vibration also influences CE. This study is fundamentally important for understanding triboelectrification, which will impact the design and improve the TENG for practical applications in a high temperature environment.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1002/adma.201803968 | DOI Listing |
Sci Adv
January 2025
Ramaciotti Centre for Cryo-Electron Microscopy, Monash University, Clayton, VIC, Australia.
High-resolution cryo-electron microscopy (cryo-EM) requires costly 200- to 300-keV cryo-transmission electron microscopes (cryo-TEMs) with field emission gun (FEG) sources, stable columns, constant-powered lenses, autoloader, and direct electron detectors (DED). Recent advances in 100-keV imaging with the emergence of sub-200-keV optimized DED technology promises the development of more affordable cryo-TEMs. So far, 100-keV imaging has required microscopes with FEG sources.
View Article and Find Full Text PDFPhys Chem Chem Phys
December 2024
Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran 1461944563, Iran.
Tunnel field-effect transistors (TFETs) are gaining interest for low-power applications, but challenges like poor drive current, delayed saturation, and ambipolarity can hinder their performance. This work proposes a dopingless heterojunction TFET (DL-HTDET) utilizing advanced materials, all based on phosphorus, to address these issues. Our approach involves a comprehensive and accurate analysis of the DL-HTDET's behavior.
View Article and Find Full Text PDFJ Phys Chem A
December 2024
Department of Chemistry, Durham University, Durham DH1 3LE, United Kingdom.
Photoelectron imaging of the doubly deprotonated ethylenediaminetetraacetic acid dianion (EDTA) at variable wavelengths indicates two electron loss pathways: direct detachment and thermionic emission from monoanions. The structure of EDTA is also investigated by electronic structure calculations, which indicate that EDTA has two intramolecular hydrogen bonds linking a carboxylate and carboxylic acid group at either end of the molecular backbone. The direct detachment feature in the photoelectron spectrum is very broad and provides evidence for a dissociative photodetachment, where decarboxylation occurs rapidly after electron loss.
View Article and Find Full Text PDFAdv Mater
December 2024
Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, 560064, India.
Metal/semiconductor superlattices represent a fascinating frontier in materials science and nanotechnology, where alternating layers of metals and semiconductors are precisely engineered at the atomic and nano-scales. Traditionally, epitaxial metal/semiconductor superlattice growth requires constituent materials from the same family, exhibiting identical structural symmetry and low lattice mismatch. Here, beyond this conventional constraint, a novel class of epitaxial lattice-matched metal/semiconductor superlattices is introduced that utilizes refractory hexagonal elemental transition metals and wide-bandgap III-nitride semiconductors.
View Article and Find Full Text PDFInt J Biol Macromol
January 2025
Institute of Engineering, Science, and Technology, Universidade Federal dos Vales do Jequitinhonha e Mucuri/UFVJM, Av. 01, 4050 Cidade Universitária, 39440-039 Janaúba, MG, Brazil; Pos-Graduate Program of Chemistry from Universidade Federal dos Vales do Jequitinhonha e Mucuri/UFVJM, Av. 01, 4050 Cidade Universitária, 39440-039 Janaúba, MG, Brazil. Electronic address:
The present research produced a new nanocomposite based on carboxymethyl cellulose (CMC) and graphene oxide (GO) for application in energy devices. A modified Hummers' method and two modifiers (UV radiation and heat temperature) were used. The nanocomposite was characterized by spectroscopies (FTIR, RAMAN, UV Vis), X-ray diffraction, morphological (SEM, TEM, DLS), and surface charge (ZP).
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!