We present a detailed study on graphene-coated aluminum thin films for Li-ion battery anode applications. The best electrode ageing behavior is obtained for Al films encapsulated with four porous graphene layers. Graphene encapsulation prevents "crushed" Al nanoparticles from detaching from the anode, thus allowing prolonged charge-discharge cycling. Graphene also provides surface conduction paths for electrons as well as diffusion paths for Li atoms. For the first time, we report the electrochemical room temperature formation of phases such as LiAl and even LiAl, with a higher Li content than β-LiAl. More interestingly, we observe a progressive change of the composite thin film electrode, switching from a pure galvanic to a pseudocapacitive behavior as the size of the Al grains decreases from ∼100 to 5-10 nm due to repeated Li alloying-dealloying. The capacity values of ∼900 and 780 mAh/g are obtained after, respectively, 500 and 1000 charge-discharge cycles at 0.1C. Our results may refocus the interest of the battery community on Al-based thin film anodes, since they are potentially very simple to fabricate, particularly if porous graphene is replaced in the future by reduced graphite oxide.
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http://dx.doi.org/10.1021/acsami.8b08358 | DOI Listing |
Sci Rep
January 2025
Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia.
Vanadium dioxide ([Formula: see text]) is a favorable material platform of modern optoelectronics, since it manifests the reversible temperature-induced insulator-metal transition (IMT) with an abrupt and rapid changes in the conductivity and optical properties. It makes possible applications of such a phase-change material in the ultra-fast optoelectronics and terahertz (THz) technology. Despite the considerable interest to this material, data on its broadband electrodynamic response in different states are still missing in the literature.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
Leibniz-Institut fur Festkorper- und Werkstoffforschung Dresden eV, Helmholtzstraße 20, 01069, Dresden, GERMANY.
This study presents the first successful demonstration of growing elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 as the precursor and Sb(SiMe3)3 as the co-reactant. The films were deposited at a relatively low temperature of 100 °C, with a growth per cycle (GPC) of 0.31-0.
View Article and Find Full Text PDFNanotechnology
January 2025
School of Electrical Engineering, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xianning West Road No.28 Xi'an Shannxi Province, Xi'an, Shaanxi, 710049, CHINA.
HfO-based ferroelectric (FE) thin films have gained considerable interest for memory applications due to their excellent properties. However, HfO₂-based FE films face significant reliability challenges, especially the wake-up and fatigue effects, which hinder their practical application. In this work, we fabricated 13.
View Article and Find Full Text PDFDalton Trans
January 2025
Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland.
Layered materials, such as tungsten dichalcogenides (TMDs), are being studied for a wide range of applications, due to their unique and varied properties. Specifically, their use as either a support for low dimensional catalysts or as an ultrathin diffusion barrier in semiconductor devices interconnect structures are particularly relevant. In order to fully realise these possible applications for TMDs, understanding the interaction between metals and the monolayer they are deposited on is of utmost importance.
View Article and Find Full Text PDFRSC Adv
January 2025
Department of Microelectronics, Jiangsu University Zhenjiang Jiangsu 212013 China
Lead halide perovskite heterojunctions have been considered as important building blocks for fabricating high-performance photodetectors (PDs). However, the interfacial defects induced non-radiative recombination and interfacial energy-level misalignment induced ineffective carrier transport severely limit the performance of photodetection of resulting devices. Herein, interfacial engineering with a spin-coating procedure has been studied to improve the photodetection performance of CHNHPbI/SnO heterojunction PDs, which were fabricated by sputtering a SnO thin film on ITO glass followed by spin-coating a CHNHPbI thin film.
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