Surface states are ubiquitous to semiconductors and significantly impact the physical properties and, consequently, the performance of optoelectronic devices. Moreover, surface effects are strongly amplified in lower dimensional systems such as quantum wells and nanostructures. Layered halide perovskites (LHPs) are two-dimensional solution-processed natural quantum wells where optoelectronic properties can be tuned by varying the perovskite layer thickness n, i.e., the number of octahedra spanning the layer. They are efficient semiconductors with technologically relevant stability. Here, a generic elastic model and electronic structure modeling are applied to LHPs heterostructures with various layer thickness. We show that the relaxation of the interface strain is triggered by perovskite layers above a critical thickness. This leads to the release of the mechanical energy arising from the lattice mismatch, which nucleates the surface reorganization and may potentially induce the formation of previously observed lower energy edge states. These states, which are absent in three-dimensional perovskites are anticipated to play a crucial role in the design of LHPs for optoelectronic systems.
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http://dx.doi.org/10.1021/acs.nanolett.8b02078 | DOI Listing |
Materials (Basel)
January 2025
CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
Hybrid systems consisting of highly transparent channels of low-dimensional semiconductors between superconducting elements allow the formation of quantum electronic circuits. Therefore, they are among the novel material platforms that could pave the way for scalable quantum computation. To this aim, InAs two-dimensional electron gases are among the ideal semiconductor systems due to their vanishing Schottky barrier; however, their exploitation is limited by the unavailability of commercial lattice-matched substrates.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
In situ X-ray reciprocal space mapping was performed during the interval heating and cooling of InGaN/GaN quantum wells (QWs) grown via metal-organic vapor phase epitaxy (MOVPE). Our detailed in situ X-ray analysis enabled us to track changes in the peak intensities and radial and angular broadenings of the reflection. By simulating the radial diffraction profiles recorded during the thermal cycle treatment, we demonstrate the presence of indium concentration distributions (ICDs) in the different QWs of the heterostructure (1.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Antimonide laser diodes, with their high performance above room temperature, exhibit significant potential for widespread applications in the mid-infrared spectral region. However, the laser's performance significantly degrades as the emission wavelength increases, primarily due to severe quantum-well hole leakage and significant non-radiative recombination. In this paper, we put up an active region with a high valence band offset and excellent crystalline quality with high luminescence to improve the laser's performance.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland.
We compare the optical properties of four diode samples differing by built-in field direction and width of the InGaN quantum well in the active layer: two diodes with standard layer sequences and 2.6 and 15 nm well widths and two diodes with inverted layer ordering (due to the tunnel junction grown before the structure) also with 2.6 and 15 nm widths.
View Article and Find Full Text PDFSci Rep
January 2025
Institute of High Pressure Physics, PAS, Warsaw, Poland.
This study addresses the issue of effective carrier injection to quantum wells in laser diode structures. The nitride light emitting structures used in this study were fabricated by Metal-Organic Vapor Phase Epitaxy (MOVPE). We developed three distinct sets of samples, with varying quantum barrier thickness, different QWs indium composition and different position relative to the p- and n-sides of the structure.
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