Engineering synaptic characteristics of TaO/HfO bi-layered resistive switching device.

We performed various pulse measurements on an atomic layer deposited (ALD) HfO-based resistive switching random access memory (RRAM) device and investigated its electronic synaptic characteristics. Unlike requirements for RRAM device application, to achieve the multi-state conductance changes required for the synaptic device, we employed additional sputtered TaO thin film formation on the ALD HfO switching medium, which leads to engineering the concentration of oxygen vacancies and modulating the conductive filaments. With this TaO/HfO bi-layered device, we attained gradual resistive switching, linear and symmetric conductance change, improved endurance and reproducibility characteristics compared to a single HfO device. Finally, we emulated spike-timing-dependent plasticity based learning rule with pulses inspired by neural action potential, indicating its potential as an electronic synaptic device in a hardware neuromorphic system.