Controlling the transition from axial to radial growth is essential for advanced III-V nanowire (NW) technology. Growth temperature and precursor flux affect this transition in a complicated manner. Here, we report on experiments designed to map the axial to radial growth transition of InP NWs prepared by the selective-area vapor-liquid-solid method during metal-organic molecular beam epitaxy. An optimized growth procedure for axial to radial switching was obtained, maintaining the pure wurtzite crystal phase of the NWs.

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http://dx.doi.org/10.1088/1361-6528/aad584DOI Listing

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