This study quantitatively assessed personal exposure of 86 workers to indium compounds as total dust at 11 Japanese indium plants. The personal exposures to indium concentrations in the breathing zone during an 8 h work-shift were determined by ICP-MS. The arithmetic mean indium concentration of all the workers was 0.098 mg Indium (In)/m, with individual values ranging from 0.0001 to 1.421 mg In/m. There were 11 workers whose exposure to indium concentrations exceeded the American Conference of Governmental Industrial Hygienists' Threshold Limit Value-Time Weighted Average (TLV-TWA) of 0.1 mg In/m. Based on the condition TLV-TWA
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6258755 PMC http://dx.doi.org/10.2486/indhealth.2018-0099 DOI Listing Publication Analysis
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ACS Appl Mater Interfaces
January 2025
School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong 518107, P.R. China.
Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring TCOs. However, no promising industrial solution has been obtained yet.
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January 2025
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Optoelectronic devices require stable operation to detect repetitive visual information. In this study, endurable arrays based on heterojunction phototransistors composed of indium-gallium-zinc oxide (IGZO) with a low dark current and tin sulfide (SnS) capable of absorbing visible light are developed for image sensors. The tandem structure of IGZO/SnS/IGZO (ISI) enables stable operation under repetitive exposure to visible light by improving the transport ability of the photoexcited carriers through mitigated trap sites and their separation into each IGZO layer.
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January 2025
Key Laboratory of Photochemistry, Institute of Chemistry Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Beijing, PR China.
To enable open environment application of artificial photosynthesis, the direct utilization of environmental CO via an oxygen-tolerant reductive procedure is necessary. Herein, we introduce an in situ growth strategy for fabricating two-dimensional heterojunctions between indium porphyrin metal-organic framework (In-MOF) and single-layer graphene oxide (GO). Upon illumination, the In-MOF/GO heterostructure facilitates a tandem CO capture and photocatalytic reduction on its hydroxylated In-node, prioritizing the reduction of dilute CO even in the presence of air-level O.
View Article and Find Full Text PDFCommun Eng
December 2024
EPIC, Large Area Thin-film Transistor Electronics, imec, Kapeldreef 75, 3001, Leuven, Belgium.
Commun Eng
July 2024
EPIC, Large Area Thin-film Transistor Electronics, imec, Kapeldreef 75, 3001, Leuven, Belgium.
Spiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such hardware, mainly digital, is typically built on mature silicon nodes. Future artificial intelligence applications will demand the execution of tasks with increasing complexity and over timescales spanning several decades.
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