During the synthesis of crystal material, specific dopant can enhance the qualities and performance of crystals, while the types, concentrations and distributions of doping elements also have significant influence on the structures and properties of artificial crystals. Hence, it is very important to determine the concentrations of doping elements for further improving the crystal material formulas, crystal growth process, andits quality control. Currently, the analysis techniques for doping elements’ characterization include atomic spectrometry, X-ray fluorescence spectrometry, inorganic mass spectrometry, electron probe microanalysis, etc. The principles, advantages and disadvantages of these techniques are discussed in this paper. Considering the specialties and scope of application, it is necessary to choose the suitable methods to improve the efficiency and accuracy. Meanwhile, the developing trends of analysis methods for doping elements are also prospected.
Download full-text PDF |
Source |
|---|
Publication Analysis
Top Keywords
Similar Publications
Dual-mode-driven nanomotors targeting inflammatory macrophages for the MRI and synergistic treatment of atherosclerosis.
J Nanobiotechnology
January 2025
School of Medical Imaging, Xuzhou Medical University, Xuzhou, 221004, China.
With the progress of atherosclerosis (AS), the arterial lumen stenosis and compact plaque structure, the thickening intima and the narrow gaps between endothelial cells significantly limit the penetration efficiency of nanoprobe to plaque, weakening the imaging sensitivity and therapy efficiency. Thus, in this study, a HO-NIR dual-mode nanomotor, Gd-doped mesoporous carbon nanoparticles/Pt with rapamycin (RAPA) loading and AntiCD36 modification (Gd-MCNs/Pt-RAPA-AC) was constructed. The asymmetric deposition of Pt on Gd-MCNs catalyzed HO at the inflammatory site to produce O, which could promote the self-motion of the nanomotor and ease inflammation microenvironment of AS plaque.
View Article and Find Full Text PDFCoalescence of multiple topological orders in quasi-one-dimensional bismuth halide chains.
Nat Commun
January 2025
School of Physics, Beihang University, Haidian District, Beijing, China.
Topology is being widely adopted to understand and to categorize quantum matter in modern physics. The nexus of topology orders, which engenders distinct quantum phases with benefits to both fundamental research and practical applications for future quantum devices, can be driven by topological phase transition through modulating intrinsic or extrinsic ordering parameters. The conjoined topology, however, is still elusive in experiments due to the lack of suitable material platforms.
View Article and Find Full Text PDFThere has been an increasing need for small, low-cost, and low-power consumption optical transceivers for short-reach fiber links. Waveguide-integrated photodetectors (PDs) with wide bandwidth and high responsivity on Si photonics platforms are an essential element for these applications. We have fabricated an O-band membrane PD which is suitable for integration with high-performance III-V-based membrane devices such as lasers and modulators, and passive waveguide circuits on the Si photonics platforms.
View Article and Find Full Text PDFOxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films.
ACS Appl Mater Interfaces
January 2025
Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.
Zinc nitride (ZnN) comprises earth-abundant elements, possesses a small direct bandgap, and is characterized by high electron mobility. While these characteristics make the material a promising compound semiconductor for various optoelectronic applications, including photovoltaics and thin-film transistors, it commonly exhibits unintentional degenerate n-type conductivity. This degenerate character has significantly impeded the development of ZnN for technological applications and is commonly assumed to arise from incorporation of oxygen impurities.
View Article and Find Full Text PDFMonolayer MoS with S vacancy defects doped with Group V non-metallic elements (N, P, As): a first-principles study.
J Mol Model
January 2025
Nanjing Hydraulic Research Institute, Shanghai, China.
Context: This study systematically investigated the effects of single S-atom vacancy defects and composite defects (vacancy combined with doping) on the properties of MoS using density functional theory. The results revealed that N-doped S-vacancy MoS has the smallest composite defect formation energy, indicating its highest stability. Doping maintained the direct band gap characteristic, with shifts in the valence band top.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!